Abstract

Thick epitaxial layers (about 2–3 µm) of crack-free zinc oxide have been obtained for the first time on a silicon substrate. A buffer layer of single-crystal silicon carbide 100 nm thick deposited by solid-phase epitaxy was used for this purpose. This results in a layer with pores and vacancies in the silicon, partially relaxing the elastic stresses. The optical constants of epitaxial layers of zinc oxide on silicon are measured. The main feature of the resulting ellipsometric spectra is light absorption in the 2.0–3.3-eV region, and this is explained by elastic stresses in the zinc oxide layer.

© 2011 OSA

High harmonic generation in epitaxially grown zinc oxide films

Troie Journigan, Yangyang Liu, Christian Cabello, S. Novia Berriel, Parag Banerjee, and Michael Chini
J. Opt. Soc. Am. B 41(6) B1-B6 (2024)

Optical constants of hydrogenated zinc oxide thin films

M. F. Al-Kuhaili, I. O. Alade, and S. M. A. Durrani
Opt. Mater. Express 4(11) 2323-2331 (2014)

Engineering the structural, plasmonic, and optical properties of multilayered aluminum-doped zinc oxide metamaterial grown by pulsed laser deposition

Priscilla Kelly, Wenrui Zhang, Mingzhao Liu, and Lyuba Kuznetsova
Appl. Opt. 58(21) 5681-5686 (2019)

Optical constants of evaporated amorphous zinc arsenide (Zn₃As₂) via spectroscopic ellipsometry

J. Colter Stewart, Micah N. Shelley, Nathan R. Schwartz, Spencer K. King, Daniel W. Boyce, James W. Erikson, David D. Allred, and John S. Colton
Opt. Mater. Express 9(12) 4677-4687 (2019)

Optical constants of magnetron-sputtered boron carbide thin films from photoabsorption data in the range 30 to 770 eV

Regina Soufli, Andrew L. Aquila, Farhad Salmassi, Mónica Fernández-Perea, and Eric M. Gullikson
Appl. Opt. 47(25) 4633-4639 (2008)