Abstract

This paper presents the idea of a new technological method of growing low-defect heterostructures of aluminum and gallium nitrides on a silicon substrate for the UV region. It is experimentally proven for the first time that creating an intermediate silicon carbide nanolayer makes it possible to use vapor-phase epitaxy to obtain high-quality layers of aluminum and gallium nitrides on a silicon substrate with no cracks. The main characteristics of the crystal perfection of these layers – namely, the half-width of the X-ray rocking curves and the half-width of the photoluminescence spectra – taking into account the absence of cracks, significantly excel the values obtained by other authors in this case. It is shown that an exciton band with a maximum emission energy of 3.45 eV and a half-width of 63 meV appears in the photoluminescence spectra of gallium nitride at a temperature of 77 K.

© 2011 OSA

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