Abstract

This optical and, in particular, the photoluminescence properties of layers of porous silicon obtained on p-type (100) crystalline silicon by anodic etching have been investigated. As a result of anodization, samples were obtained with surface potentials 0.9, 1.1, 1.2, 1.3, and 1.5V. It is established that the photoluminescence intensity of the sample with surface potential 1.3V is maximal by comparison with all the other samples and is a factor of 12 higher than in the sample with surface potential 0.9V. Optical spectroscopy was used to study how the photoluminescence intensity of the samples depends on the structure of the surface bonds. It is shown that the strong increase of the photoluminescence is caused by photostimulated reconstruction on the surface of the anodized porous silicon samples.

© 2010 Optical Society of America

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