Abstract
It is shown that luminescence of CsI crystals with wavelength λ<sub>em</sub>=305nm is observed at room temperature when it is excited in the long-wavelength exciton-absorption band at λ<sub>ex</sub>=220nm. To excite this luminescence close to the surface, two factors need to be taken into account when fabricating the samples. First, the temporal character of the relaxation of the damaged layer; second, the penetration of quenching impurities into the near-surface layer during the diffusion escape of surplus vacancies onto the free surface. The intrinsic photoluminescence of CsI crystals was observed earlier only in the two-photon absorption regime, when the crystal was transparent to the exciting light. To minimize the number of defects in the near-surface layer, chemical polishing of the surface is proposed, carried out after the damaged layer relaxes.
© 2010 Optical Society of America
PDF Article
More Like This
Influence of thermal treatment on the near-infrared broadband luminescence of Bi:CsI crystals
Xiao Fan, Liangbi Su, Guohao Ren, Xiantao Jiang, Haibo Xing, Jun Xu, Huili Tang, Hongjun Li, Lihe Zheng, Xiaobo Qian, and He Feng
Opt. Mater. Express 3(3) 400-406 (2013)
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription