Abstract
This paper presents the results of an experimental study of how the relief height of
reflective relief-phase holograms obtained on layers of glassy chalcogenide
semiconductor (GCS) affects the parasitic-nanostructuring parameters of their
surface. The work is carried out by means of the Solver P-47 scanning probe
microscope. The short-wavelength limit within which reflective relief-phase
holograms obtained on thick GCS layers can be used, established with no a posteriori processing, equals 80nm. Starting from that value, holograms whose relief height is optimized to
maximize the diffraction efficiency satisfy the Maréchal criteria σ⩽λ/27 in terms of their rms surface-roughness parameter σ and possess allowable light scattering σ⩽λ/100 and thereby provide the light-scattering level and aberrations allowable
for precision optical systems in the image reconstructed by these holograms.
© 2009 Optical Society of America
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