This paper presents the results of growing quantum wells based on HgTe (HgTe/Cd<sub>0.735</sub>Hg<sub>0.265</sub>Te) 16.2 and 21nm thick on substrates of (013) CdTe/ZnTe/GaAs by molecular-beam epitaxy. The composition and thickness of the spacer and of the quantum well were monitored by an ellipsometric technique during growth. Galvanomagnetic studies in a wide range of magnetic fields (1-12T) at temperatures close to that of liquid helium (4.2K) showed that a two-dimensional electron gas is present in the nanostructures and that the levels are quantized. High mobilities were obtained for the two-dimensional electron gas: μ<sub>e</sub>=2×10<sup>5</sup>cm<sup>2</sup>/(V⋅sec) for an electron density of N<sub>s</sub>=1.5×10<sup>11</sup>cm<sup>−2</sup> and μ<sub>e</sub>=5×10<sup>5</sup>cm<sup>2</sup>/(V⋅sec) for N<sub>s</sub>=3.5×10<sup>11</sup>cm<sup>−2</sup>. The circular and linear photogalvanic effects were studied in the quantum wells at room temperature in a wide wavelength interval: from the mid-IR (6-16μm) to the terahertz range (100-500μm).
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