This paper proposes a photodetector design based on a CdHgTe variband heteroepitaxial structure with a high-conductivity layer (HCL) that ensures that the photodiodes have low series resistance and simultaneously serves the function of a short-wavelength cutoff filter. Based on an analysis of how the parameters of the HCL affect the quantum efficiency and the noise-equivalent temperature difference of the photodetector arrays (PDAs), its optimum parameters are determined. Samples of PDAs are fabricated with a format of 320×256 elements for the 8-12-μm spectral range, based on hybrid assembly of photosensitive elements made from p-type (013) HgCdTe/CdTe/ZnTe/GaAs heteroepitaxial structures with an HCL and a silicon multiplexer. The voltage sensitivity, the threshold irradiance, and the noise-equivalent temperature difference at the maximum sensitivity were 4.1×10<sup>8</sup>V/W, 1.02×10<sup>−7</sup>W/cm<sup>2</sup>, and 27mK, respectively.
© 2009 Optical Society of AmericaPDF Article