Abstract

This paper discusses features of the electrophysical properties of semiconductors as applied to their use as an optical medium for IR systems. It is shown that reliable information on the absorption coefficient in the IR region can be obtained from a collection of parameters: the conductivity type, resistivity, charge-carrier mobility, and band gap.

© 2008 Optical Society of America

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  1. T. S. Moss, Optical Properties of Semiconductors, rev. ed. (Butterworths, London, 1961; Inostr. Lit., Moscow, 1967).
  2. I. M. Nesmelova, N. I. Astaf'ev, and E. A. Nesmelov, “Resistivity dependence of the absorption coefficient of crystalline germanium in the IR region,” Opt. Zh. 74, No. 1, 88 (2007) I. M. Nesmelova, N. I. Astaf'ev, and E. A. Nesmelov, [J. Opt. Technol. 74, 88 (2007)].
  3. E. M. Gavrishchuk, “Polycrystalline ZnSe for IR optics,” Neorg. Mater. 39, 1031 (2003).
  4. N. P. Harrick, “Measuring the lifetime of excess current carriers in semiconductors,” in Current-Carrier Recombination in Semiconductors, ed. V.A.Bonch-Bruevich (Inostr. Lit., Moscow, 1959).
  5. Y. Toyoda, L. R. Elias, and W. M. Yen, “Time-resolved reflectance and transmittance measurements of laser-induced free carriers in germanium, silicon, and zinc selenide at 10.6μm,” Appl. Opt. 46, 785 (2007).
    [CrossRef]
  6. J. S. Blakemore, Semiconductor Statistics, (Pergamon Press, Oxford, 1962; Mir, Moscow, 1964).
  7. R. H. Bube, Photoconductivity of Solids (Wiley, New York, 1960; Inostr. Lit., Moscow, 1962).
  8. N. F. Kovtonyuk and R. A. Kontsevoĭ, Measuring the Parameters of Semiconductor Materials (Metallurgiya, Moscow, 1970).
  9. I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shaĭovich, “Measuring the light-attenuation coefficients of germanium and paratellurite crystals,” Opt. Zh. 72, No. 7, 76 (2005) I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shĭovich, [J. Opt. Technol. 72, 564 (2005)].
  10. G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, “Optical crystals and polycrystals,” Opt. Zh. No. 11, 77 (1993) G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, [J. Opt. Technol. 60, 802 (1993)].
  11. E. M. Gavrishchuk and É. V. Yashina, “Zinc sulfide and zinc selenide optical elements for IR engineering,” Opt. Zh. 71, No. 12, 24 (2004) E. M. Gavrishchuk and É. V. Yashina,J. Opt. Technol. 71, 822 (2004).

2007 (2)

I. M. Nesmelova, N. I. Astaf'ev, and E. A. Nesmelov, “Resistivity dependence of the absorption coefficient of crystalline germanium in the IR region,” Opt. Zh. 74, No. 1, 88 (2007) I. M. Nesmelova, N. I. Astaf'ev, and E. A. Nesmelov, [J. Opt. Technol. 74, 88 (2007)].

Y. Toyoda, L. R. Elias, and W. M. Yen, “Time-resolved reflectance and transmittance measurements of laser-induced free carriers in germanium, silicon, and zinc selenide at 10.6μm,” Appl. Opt. 46, 785 (2007).
[CrossRef]

2005 (1)

I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shaĭovich, “Measuring the light-attenuation coefficients of germanium and paratellurite crystals,” Opt. Zh. 72, No. 7, 76 (2005) I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shĭovich, [J. Opt. Technol. 72, 564 (2005)].

2004 (1)

E. M. Gavrishchuk and É. V. Yashina, “Zinc sulfide and zinc selenide optical elements for IR engineering,” Opt. Zh. 71, No. 12, 24 (2004) E. M. Gavrishchuk and É. V. Yashina,J. Opt. Technol. 71, 822 (2004).

2003 (1)

E. M. Gavrishchuk, “Polycrystalline ZnSe for IR optics,” Neorg. Mater. 39, 1031 (2003).

Astaf'ev, N. I.

I. M. Nesmelova, N. I. Astaf'ev, and E. A. Nesmelov, “Resistivity dependence of the absorption coefficient of crystalline germanium in the IR region,” Opt. Zh. 74, No. 1, 88 (2007) I. M. Nesmelova, N. I. Astaf'ev, and E. A. Nesmelov, [J. Opt. Technol. 74, 88 (2007)].

Blakemore, J. S.

J. S. Blakemore, Semiconductor Statistics, (Pergamon Press, Oxford, 1962; Mir, Moscow, 1964).

Borozdin, S. N.

G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, “Optical crystals and polycrystals,” Opt. Zh. No. 11, 77 (1993) G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, [J. Opt. Technol. 60, 802 (1993)].

Bube, R. H.

R. H. Bube, Photoconductivity of Solids (Wiley, New York, 1960; Inostr. Lit., Moscow, 1962).

Elias, L. R.

Gavrishchuk, E. M.

E. M. Gavrishchuk and É. V. Yashina, “Zinc sulfide and zinc selenide optical elements for IR engineering,” Opt. Zh. 71, No. 12, 24 (2004) E. M. Gavrishchuk and É. V. Yashina,J. Opt. Technol. 71, 822 (2004).

E. M. Gavrishchuk, “Polycrystalline ZnSe for IR optics,” Neorg. Mater. 39, 1031 (2003).

Harrick, N. P.

N. P. Harrick, “Measuring the lifetime of excess current carriers in semiconductors,” in Current-Carrier Recombination in Semiconductors, ed. V.A.Bonch-Bruevich (Inostr. Lit., Moscow, 1959).

Kaplunov, I. A.

I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shaĭovich, “Measuring the light-attenuation coefficients of germanium and paratellurite crystals,” Opt. Zh. 72, No. 7, 76 (2005) I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shĭovich, [J. Opt. Technol. 72, 564 (2005)].

Kolesnikov, A. I.

I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shaĭovich, “Measuring the light-attenuation coefficients of germanium and paratellurite crystals,” Opt. Zh. 72, No. 7, 76 (2005) I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shĭovich, [J. Opt. Technol. 72, 564 (2005)].

Kontsevoi, R. A.

N. F. Kovtonyuk and R. A. Kontsevoĭ, Measuring the Parameters of Semiconductor Materials (Metallurgiya, Moscow, 1970).

Kovtonyuk, N. F.

N. F. Kovtonyuk and R. A. Kontsevoĭ, Measuring the Parameters of Semiconductor Materials (Metallurgiya, Moscow, 1970).

Mal'tsev, M. V.

G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, “Optical crystals and polycrystals,” Opt. Zh. No. 11, 77 (1993) G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, [J. Opt. Technol. 60, 802 (1993)].

Mironov, I. A.

G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, “Optical crystals and polycrystals,” Opt. Zh. No. 11, 77 (1993) G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, [J. Opt. Technol. 60, 802 (1993)].

Moss, T. S.

T. S. Moss, Optical Properties of Semiconductors, rev. ed. (Butterworths, London, 1961; Inostr. Lit., Moscow, 1967).

Musatov, M. I.

G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, “Optical crystals and polycrystals,” Opt. Zh. No. 11, 77 (1993) G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, [J. Opt. Technol. 60, 802 (1993)].

Nesmelov, E. A.

I. M. Nesmelova, N. I. Astaf'ev, and E. A. Nesmelov, “Resistivity dependence of the absorption coefficient of crystalline germanium in the IR region,” Opt. Zh. 74, No. 1, 88 (2007) I. M. Nesmelova, N. I. Astaf'ev, and E. A. Nesmelov, [J. Opt. Technol. 74, 88 (2007)].

Nesmelova, I. M.

I. M. Nesmelova, N. I. Astaf'ev, and E. A. Nesmelov, “Resistivity dependence of the absorption coefficient of crystalline germanium in the IR region,” Opt. Zh. 74, No. 1, 88 (2007) I. M. Nesmelova, N. I. Astaf'ev, and E. A. Nesmelov, [J. Opt. Technol. 74, 88 (2007)].

Petrovskii, G. T.

G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, “Optical crystals and polycrystals,” Opt. Zh. No. 11, 77 (1993) G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, [J. Opt. Technol. 60, 802 (1993)].

Pis'mennyi, V. A.

G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, “Optical crystals and polycrystals,” Opt. Zh. No. 11, 77 (1993) G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, [J. Opt. Technol. 60, 802 (1993)].

Sedova, L. Z.

I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shaĭovich, “Measuring the light-attenuation coefficients of germanium and paratellurite crystals,” Opt. Zh. 72, No. 7, 76 (2005) I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shĭovich, [J. Opt. Technol. 72, 564 (2005)].

Shaiovich, S. L.

I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shaĭovich, “Measuring the light-attenuation coefficients of germanium and paratellurite crystals,” Opt. Zh. 72, No. 7, 76 (2005) I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shĭovich, [J. Opt. Technol. 72, 564 (2005)].

Shatilov, A. V.

G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, “Optical crystals and polycrystals,” Opt. Zh. No. 11, 77 (1993) G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, [J. Opt. Technol. 60, 802 (1993)].

Talyzin, I. V.

I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shaĭovich, “Measuring the light-attenuation coefficients of germanium and paratellurite crystals,” Opt. Zh. 72, No. 7, 76 (2005) I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shĭovich, [J. Opt. Technol. 72, 564 (2005)].

Toyoda, Y.

Yashina, É. V.

E. M. Gavrishchuk and É. V. Yashina, “Zinc sulfide and zinc selenide optical elements for IR engineering,” Opt. Zh. 71, No. 12, 24 (2004) E. M. Gavrishchuk and É. V. Yashina,J. Opt. Technol. 71, 822 (2004).

Yen, W. M.

Appl. Opt. (1)

Neorg. Mater. (1)

E. M. Gavrishchuk, “Polycrystalline ZnSe for IR optics,” Neorg. Mater. 39, 1031 (2003).

Opt. Zh. (3)

I. M. Nesmelova, N. I. Astaf'ev, and E. A. Nesmelov, “Resistivity dependence of the absorption coefficient of crystalline germanium in the IR region,” Opt. Zh. 74, No. 1, 88 (2007) I. M. Nesmelova, N. I. Astaf'ev, and E. A. Nesmelov, [J. Opt. Technol. 74, 88 (2007)].

I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shaĭovich, “Measuring the light-attenuation coefficients of germanium and paratellurite crystals,” Opt. Zh. 72, No. 7, 76 (2005) I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shĭovich, [J. Opt. Technol. 72, 564 (2005)].

E. M. Gavrishchuk and É. V. Yashina, “Zinc sulfide and zinc selenide optical elements for IR engineering,” Opt. Zh. 71, No. 12, 24 (2004) E. M. Gavrishchuk and É. V. Yashina,J. Opt. Technol. 71, 822 (2004).

Other (6)

G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, “Optical crystals and polycrystals,” Opt. Zh. No. 11, 77 (1993) G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, [J. Opt. Technol. 60, 802 (1993)].

T. S. Moss, Optical Properties of Semiconductors, rev. ed. (Butterworths, London, 1961; Inostr. Lit., Moscow, 1967).

N. P. Harrick, “Measuring the lifetime of excess current carriers in semiconductors,” in Current-Carrier Recombination in Semiconductors, ed. V.A.Bonch-Bruevich (Inostr. Lit., Moscow, 1959).

J. S. Blakemore, Semiconductor Statistics, (Pergamon Press, Oxford, 1962; Mir, Moscow, 1964).

R. H. Bube, Photoconductivity of Solids (Wiley, New York, 1960; Inostr. Lit., Moscow, 1962).

N. F. Kovtonyuk and R. A. Kontsevoĭ, Measuring the Parameters of Semiconductor Materials (Metallurgiya, Moscow, 1970).

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