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Using laser sputtering to obtain semiconductor nanoheterostructures

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Abstract

Laser sputtering of solid-state targets in a hydrogen atmosphere has been used to form semiconductor nanoheterostructures. Impurities (Te or Mn) in the form of delta-doped layers obtained by laser sputtering of the corresponding targets in the process of vapor-phase epitaxy using organometallic compounds can be introduced into light-emitting structures based on the InGaAs/GaAs system to make it possible to control the spectrum and the electroluminescence intensity. Reducing the hydrogen pressure in the reactor to 25-50Torr allows laser deposition to be carried out at reduced temperatures of the epitaxial layers of the base material and makes it possible to obtain GaAs and InAs semiconductors with a high manganese-doping level that demonstrate ferromagnetic properties at room temperature.

© 2008 Optical Society of America

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