Abstract
Laser sputtering of solid-state targets in a hydrogen atmosphere has been used to
form semiconductor nanoheterostructures. Impurities (Te or Mn) in the form of
delta-doped layers obtained by laser sputtering of the corresponding targets in the
process of vapor-phase epitaxy using organometallic compounds can be introduced into
light-emitting structures based on the InGaAs/GaAs system to make it possible to control
the spectrum and the electroluminescence intensity. Reducing the hydrogen pressure in
the reactor to 25-50Torr allows laser deposition to be carried out at reduced
temperatures of the epitaxial layers of the base material and makes it possible to
obtain GaAs and InAs semiconductors with a high manganese-doping level that demonstrate
ferromagnetic properties at room temperature.
© 2008 Optical Society of America
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