Abstract

This paper discusses questions of synthesizing and pressing aluminum nitride in order to obtain film-forming materials that can be used to form optical coatings. Based on the resulting film-forming materials, a technological process has been developed for fabricating coatings from aluminum nitride, based on two vacuum methods of depositing thin films: vacuum evaporation and magnetron sputtering. Questions of the use of aluminum nitride films in optical instrumentation are considered.

© 2008 Optical Society of America

PDF Article

References

  • View by:
  • |
  • |
  • |

  1. A. Fischer, “Verfahren zur Herstellung und Dotierung von Aluminiumnitrid-kristallen,” Patent FRG N 1128410 (1962).
  2. H. R. Hutton, “Piezoelectric device utilizing aluminum nitride,” U.S. Patent 3090876 (1963).
  3. H. D. Witzke, “Ein Beitrag zur orientiren Abscheidung halbleitender Verbinddungen aus der Dampfphase am Beispiel AlN-Al4C3,” Z. Phys. Chem. (Munich) 221, 253 (1962).
  4. F. Fichter, “Über Aluminiumnitrid,” Z. Anorg. Allg. Chem. 54, 322 (1907).
  5. J. Wolf, “Über Darstelling von Aluminiumnitrid aus den Element,” Z. Anorg. Allg. Chem. 83, 159 (1913).
  6. E. Tiede, M. Thimann, and K. Sensse, “Über phosphorescenzfähiges, durch Siliciumaktiviertes Aluminiumnitrid,” Ber. 61, 1568 (1928).
  7. T. Renner, “Über Aluminiumnitrid,” Z. Anorg. Allg. Chem. 298, 22 (1959).
    [CrossRef]
  8. J. W. Warren, “Measurement of appearance potentials of ions produced by electron impact using a mass spectrometer,” Nature (London) 165, 810 (1950).
    [CrossRef]
  9. V.N.Kondrat'eva, ed., Breakdown Energies of Chemical Bonds. Ionization Potentials and Electron Affinities. A Handbook (Nauka, Moscow, 1974).
  10. S. A. Kutolin, I. V. Stepanov, and N. I. Boĭkin, “The effect of UV irradiation on the crystallization process of aluminum nitride and oxide films obtained by vacuum evaporation,” Élektr. Ser. Polupr. Pribory ISL No. 001628, 1 (1971).
  11. I. V. Stepanov, S. A. Kutolin, M. I. Antonov, and G. P. Tepman, “Study of processes for obtaining and using dielectric films based on aluminum nitride,” in Methods of Production, Properties, and Application of Nitrides. A Collection of Papers (Izd. IPM AN USSR, Kiev, 1972), pp 201-208.
  12. V. T. Miller and A. F. Perveev, “Device for ion-cleaning substrates and ion-polishing layers,” Opt. Zh. No. 2, 72 (1993) V. T. Miller and A. F. Perveev[Sov. J. Opt. Technol. 60, 143 (1993)].
  13. A. V. Stepuro, T. S. Turovskaya, G. A. Muranova, and A. F. Perveev, “The effect of the ion-processing of substrates on the initial growth stage of metal films,” Opt. Mekh. Prom. No. 11, 30 (1983) A. V. Stepuro, T. S. Turovskaya, G. A. Muranova, and A. F. Perveev[Sov. J. Opt. Technol. 50, 699 (1983)].
  14. A. F. Perveev, “Ion processing of optical materials and coatings,” Trudy Gos. Opt. Inst. 52, No. 186, 58 (1983).
  15. Z. R. Song, Y. H. Yu, S. C. Zou, Z. H. Zheng, D. S. Shen, E. Z. Luo, Z. Xie, B. Sundaravel, S. P. Wong, and I. H. Wilson, “Simulation and characterization on properties of AlN films for SOI application,” Thin Solid Films 459, 41 (2004).
  16. Kok-Wan Tay, Cheng-Liang Huang, Long Wu, and Meng-Shan Lin, “Performance characterization of thin AlN films deposited on Mo electrode for thin-film bulk acoustic wave resonators,” Jpn. J. Appl. Phys. Pt. 1 43, 5510 (2004).
  17. E. Iborra, J. Olivares, M. Clement, L. Vergara, A. Sanz-Hervas, and J. Sangrador, “Piezoelectric properties and residual stress of sputtered AlN thin films for MEMS applications,” Sens. Actuators, A 115, 501 (2004).
    [CrossRef]
  18. P. J. Martin, H. A. Macleod, R. P. Netterfield, C. G. Pacey, and W. G. Sainty, “Ion-beam-assisted deposition of thin films,” Appl. Opt. 22, 178 (1983).
  19. Chang Kwon Hwangbo, L. J. Lingg, J. P. Lehan, H. A. Macleod, J. L. Makous, and Sang Yeol Kim, “Ion-assisted deposition of thermally evaporated Ag and Al films,” Appl. Opt. 28, 2769 (1989).
  20. B. S. Danilin, and V. K. Syrchin, Magnetron Sputtering Systems (Radio i Svyaz', Moscow, 1982).
  21. S. Morrison, The Chemical Physics of Surfaces (Plenum Press, New York, 1977; Mir, Moscow, 1980).
  22. J. P. Hobson, “Physical adsorption,” Crit. Rev. Solid State Mater. Sci. 4, 221 (1973).
  23. A. V. Mikhaĭlov, G. A. Muranova, and N. N. Smirnov, “Determining the colorimetric parameters and optimizing the design of colored mirrors based on metal-dielectric interference systems,” Opt. Zh. 68, No. 8, 30 (2001) A. V. Mikhaĭlov, G. A. Muranova, and N. N. Smirnov[J. Opt. Technol. 68, 564 (2001)].

2004 (3)

Z. R. Song, Y. H. Yu, S. C. Zou, Z. H. Zheng, D. S. Shen, E. Z. Luo, Z. Xie, B. Sundaravel, S. P. Wong, and I. H. Wilson, “Simulation and characterization on properties of AlN films for SOI application,” Thin Solid Films 459, 41 (2004).

Kok-Wan Tay, Cheng-Liang Huang, Long Wu, and Meng-Shan Lin, “Performance characterization of thin AlN films deposited on Mo electrode for thin-film bulk acoustic wave resonators,” Jpn. J. Appl. Phys. Pt. 1 43, 5510 (2004).

E. Iborra, J. Olivares, M. Clement, L. Vergara, A. Sanz-Hervas, and J. Sangrador, “Piezoelectric properties and residual stress of sputtered AlN thin films for MEMS applications,” Sens. Actuators, A 115, 501 (2004).
[CrossRef]

2001 (1)

A. V. Mikhaĭlov, G. A. Muranova, and N. N. Smirnov, “Determining the colorimetric parameters and optimizing the design of colored mirrors based on metal-dielectric interference systems,” Opt. Zh. 68, No. 8, 30 (2001) A. V. Mikhaĭlov, G. A. Muranova, and N. N. Smirnov[J. Opt. Technol. 68, 564 (2001)].

1993 (1)

V. T. Miller and A. F. Perveev, “Device for ion-cleaning substrates and ion-polishing layers,” Opt. Zh. No. 2, 72 (1993) V. T. Miller and A. F. Perveev[Sov. J. Opt. Technol. 60, 143 (1993)].

1989 (1)

1983 (3)

P. J. Martin, H. A. Macleod, R. P. Netterfield, C. G. Pacey, and W. G. Sainty, “Ion-beam-assisted deposition of thin films,” Appl. Opt. 22, 178 (1983).

A. V. Stepuro, T. S. Turovskaya, G. A. Muranova, and A. F. Perveev, “The effect of the ion-processing of substrates on the initial growth stage of metal films,” Opt. Mekh. Prom. No. 11, 30 (1983) A. V. Stepuro, T. S. Turovskaya, G. A. Muranova, and A. F. Perveev[Sov. J. Opt. Technol. 50, 699 (1983)].

A. F. Perveev, “Ion processing of optical materials and coatings,” Trudy Gos. Opt. Inst. 52, No. 186, 58 (1983).

1973 (1)

J. P. Hobson, “Physical adsorption,” Crit. Rev. Solid State Mater. Sci. 4, 221 (1973).

1962 (1)

H. D. Witzke, “Ein Beitrag zur orientiren Abscheidung halbleitender Verbinddungen aus der Dampfphase am Beispiel AlN-Al4C3,” Z. Phys. Chem. (Munich) 221, 253 (1962).

1959 (1)

T. Renner, “Über Aluminiumnitrid,” Z. Anorg. Allg. Chem. 298, 22 (1959).
[CrossRef]

1950 (1)

J. W. Warren, “Measurement of appearance potentials of ions produced by electron impact using a mass spectrometer,” Nature (London) 165, 810 (1950).
[CrossRef]

1928 (1)

E. Tiede, M. Thimann, and K. Sensse, “Über phosphorescenzfähiges, durch Siliciumaktiviertes Aluminiumnitrid,” Ber. 61, 1568 (1928).

1913 (1)

J. Wolf, “Über Darstelling von Aluminiumnitrid aus den Element,” Z. Anorg. Allg. Chem. 83, 159 (1913).

1907 (1)

F. Fichter, “Über Aluminiumnitrid,” Z. Anorg. Allg. Chem. 54, 322 (1907).

Antonov, M. I.

I. V. Stepanov, S. A. Kutolin, M. I. Antonov, and G. P. Tepman, “Study of processes for obtaining and using dielectric films based on aluminum nitride,” in Methods of Production, Properties, and Application of Nitrides. A Collection of Papers (Izd. IPM AN USSR, Kiev, 1972), pp 201-208.

Boikin, N. I.

S. A. Kutolin, I. V. Stepanov, and N. I. Boĭkin, “The effect of UV irradiation on the crystallization process of aluminum nitride and oxide films obtained by vacuum evaporation,” Élektr. Ser. Polupr. Pribory ISL No. 001628, 1 (1971).

Clement, M.

E. Iborra, J. Olivares, M. Clement, L. Vergara, A. Sanz-Hervas, and J. Sangrador, “Piezoelectric properties and residual stress of sputtered AlN thin films for MEMS applications,” Sens. Actuators, A 115, 501 (2004).
[CrossRef]

Danilin, B. S.

B. S. Danilin, and V. K. Syrchin, Magnetron Sputtering Systems (Radio i Svyaz', Moscow, 1982).

Fichter, F.

F. Fichter, “Über Aluminiumnitrid,” Z. Anorg. Allg. Chem. 54, 322 (1907).

Fischer, A.

A. Fischer, “Verfahren zur Herstellung und Dotierung von Aluminiumnitrid-kristallen,” Patent FRG N 1128410 (1962).

Hobson, J. P.

J. P. Hobson, “Physical adsorption,” Crit. Rev. Solid State Mater. Sci. 4, 221 (1973).

Huang, Cheng-Liang

Kok-Wan Tay, Cheng-Liang Huang, Long Wu, and Meng-Shan Lin, “Performance characterization of thin AlN films deposited on Mo electrode for thin-film bulk acoustic wave resonators,” Jpn. J. Appl. Phys. Pt. 1 43, 5510 (2004).

Hutton, H. R.

H. R. Hutton, “Piezoelectric device utilizing aluminum nitride,” U.S. Patent 3090876 (1963).

Hwangbo, Chang Kwon

Iborra, E.

E. Iborra, J. Olivares, M. Clement, L. Vergara, A. Sanz-Hervas, and J. Sangrador, “Piezoelectric properties and residual stress of sputtered AlN thin films for MEMS applications,” Sens. Actuators, A 115, 501 (2004).
[CrossRef]

Kim, Sang Yeol

Kutolin, S. A.

S. A. Kutolin, I. V. Stepanov, and N. I. Boĭkin, “The effect of UV irradiation on the crystallization process of aluminum nitride and oxide films obtained by vacuum evaporation,” Élektr. Ser. Polupr. Pribory ISL No. 001628, 1 (1971).

I. V. Stepanov, S. A. Kutolin, M. I. Antonov, and G. P. Tepman, “Study of processes for obtaining and using dielectric films based on aluminum nitride,” in Methods of Production, Properties, and Application of Nitrides. A Collection of Papers (Izd. IPM AN USSR, Kiev, 1972), pp 201-208.

Lehan, J. P.

Lin, Meng-Shan

Kok-Wan Tay, Cheng-Liang Huang, Long Wu, and Meng-Shan Lin, “Performance characterization of thin AlN films deposited on Mo electrode for thin-film bulk acoustic wave resonators,” Jpn. J. Appl. Phys. Pt. 1 43, 5510 (2004).

Lingg, L. J.

Luo, E. Z.

Z. R. Song, Y. H. Yu, S. C. Zou, Z. H. Zheng, D. S. Shen, E. Z. Luo, Z. Xie, B. Sundaravel, S. P. Wong, and I. H. Wilson, “Simulation and characterization on properties of AlN films for SOI application,” Thin Solid Films 459, 41 (2004).

Macleod, H. A.

Makous, J. L.

Martin, P. J.

Mikhailov, A. V.

A. V. Mikhaĭlov, G. A. Muranova, and N. N. Smirnov, “Determining the colorimetric parameters and optimizing the design of colored mirrors based on metal-dielectric interference systems,” Opt. Zh. 68, No. 8, 30 (2001) A. V. Mikhaĭlov, G. A. Muranova, and N. N. Smirnov[J. Opt. Technol. 68, 564 (2001)].

Miller, V. T.

V. T. Miller and A. F. Perveev, “Device for ion-cleaning substrates and ion-polishing layers,” Opt. Zh. No. 2, 72 (1993) V. T. Miller and A. F. Perveev[Sov. J. Opt. Technol. 60, 143 (1993)].

Morrison, S.

S. Morrison, The Chemical Physics of Surfaces (Plenum Press, New York, 1977; Mir, Moscow, 1980).

Muranova, G. A.

A. V. Mikhaĭlov, G. A. Muranova, and N. N. Smirnov, “Determining the colorimetric parameters and optimizing the design of colored mirrors based on metal-dielectric interference systems,” Opt. Zh. 68, No. 8, 30 (2001) A. V. Mikhaĭlov, G. A. Muranova, and N. N. Smirnov[J. Opt. Technol. 68, 564 (2001)].

A. V. Stepuro, T. S. Turovskaya, G. A. Muranova, and A. F. Perveev, “The effect of the ion-processing of substrates on the initial growth stage of metal films,” Opt. Mekh. Prom. No. 11, 30 (1983) A. V. Stepuro, T. S. Turovskaya, G. A. Muranova, and A. F. Perveev[Sov. J. Opt. Technol. 50, 699 (1983)].

Netterfield, R. P.

Olivares, J.

E. Iborra, J. Olivares, M. Clement, L. Vergara, A. Sanz-Hervas, and J. Sangrador, “Piezoelectric properties and residual stress of sputtered AlN thin films for MEMS applications,” Sens. Actuators, A 115, 501 (2004).
[CrossRef]

Pacey, C. G.

Perveev, A. F.

V. T. Miller and A. F. Perveev, “Device for ion-cleaning substrates and ion-polishing layers,” Opt. Zh. No. 2, 72 (1993) V. T. Miller and A. F. Perveev[Sov. J. Opt. Technol. 60, 143 (1993)].

A. V. Stepuro, T. S. Turovskaya, G. A. Muranova, and A. F. Perveev, “The effect of the ion-processing of substrates on the initial growth stage of metal films,” Opt. Mekh. Prom. No. 11, 30 (1983) A. V. Stepuro, T. S. Turovskaya, G. A. Muranova, and A. F. Perveev[Sov. J. Opt. Technol. 50, 699 (1983)].

A. F. Perveev, “Ion processing of optical materials and coatings,” Trudy Gos. Opt. Inst. 52, No. 186, 58 (1983).

Renner, T.

T. Renner, “Über Aluminiumnitrid,” Z. Anorg. Allg. Chem. 298, 22 (1959).
[CrossRef]

Sainty, W. G.

Sangrador, J.

E. Iborra, J. Olivares, M. Clement, L. Vergara, A. Sanz-Hervas, and J. Sangrador, “Piezoelectric properties and residual stress of sputtered AlN thin films for MEMS applications,” Sens. Actuators, A 115, 501 (2004).
[CrossRef]

Sanz-Hervas, A.

E. Iborra, J. Olivares, M. Clement, L. Vergara, A. Sanz-Hervas, and J. Sangrador, “Piezoelectric properties and residual stress of sputtered AlN thin films for MEMS applications,” Sens. Actuators, A 115, 501 (2004).
[CrossRef]

Sensse, K.

E. Tiede, M. Thimann, and K. Sensse, “Über phosphorescenzfähiges, durch Siliciumaktiviertes Aluminiumnitrid,” Ber. 61, 1568 (1928).

Shen, D. S.

Z. R. Song, Y. H. Yu, S. C. Zou, Z. H. Zheng, D. S. Shen, E. Z. Luo, Z. Xie, B. Sundaravel, S. P. Wong, and I. H. Wilson, “Simulation and characterization on properties of AlN films for SOI application,” Thin Solid Films 459, 41 (2004).

Smirnov, N. N.

A. V. Mikhaĭlov, G. A. Muranova, and N. N. Smirnov, “Determining the colorimetric parameters and optimizing the design of colored mirrors based on metal-dielectric interference systems,” Opt. Zh. 68, No. 8, 30 (2001) A. V. Mikhaĭlov, G. A. Muranova, and N. N. Smirnov[J. Opt. Technol. 68, 564 (2001)].

Song, Z. R.

Z. R. Song, Y. H. Yu, S. C. Zou, Z. H. Zheng, D. S. Shen, E. Z. Luo, Z. Xie, B. Sundaravel, S. P. Wong, and I. H. Wilson, “Simulation and characterization on properties of AlN films for SOI application,” Thin Solid Films 459, 41 (2004).

Stepanov, I. V.

S. A. Kutolin, I. V. Stepanov, and N. I. Boĭkin, “The effect of UV irradiation on the crystallization process of aluminum nitride and oxide films obtained by vacuum evaporation,” Élektr. Ser. Polupr. Pribory ISL No. 001628, 1 (1971).

I. V. Stepanov, S. A. Kutolin, M. I. Antonov, and G. P. Tepman, “Study of processes for obtaining and using dielectric films based on aluminum nitride,” in Methods of Production, Properties, and Application of Nitrides. A Collection of Papers (Izd. IPM AN USSR, Kiev, 1972), pp 201-208.

Stepuro, A. V.

A. V. Stepuro, T. S. Turovskaya, G. A. Muranova, and A. F. Perveev, “The effect of the ion-processing of substrates on the initial growth stage of metal films,” Opt. Mekh. Prom. No. 11, 30 (1983) A. V. Stepuro, T. S. Turovskaya, G. A. Muranova, and A. F. Perveev[Sov. J. Opt. Technol. 50, 699 (1983)].

Sundaravel, B.

Z. R. Song, Y. H. Yu, S. C. Zou, Z. H. Zheng, D. S. Shen, E. Z. Luo, Z. Xie, B. Sundaravel, S. P. Wong, and I. H. Wilson, “Simulation and characterization on properties of AlN films for SOI application,” Thin Solid Films 459, 41 (2004).

Syrchin, V. K.

B. S. Danilin, and V. K. Syrchin, Magnetron Sputtering Systems (Radio i Svyaz', Moscow, 1982).

Tay, Kok-Wan

Kok-Wan Tay, Cheng-Liang Huang, Long Wu, and Meng-Shan Lin, “Performance characterization of thin AlN films deposited on Mo electrode for thin-film bulk acoustic wave resonators,” Jpn. J. Appl. Phys. Pt. 1 43, 5510 (2004).

Tepman, G. P.

I. V. Stepanov, S. A. Kutolin, M. I. Antonov, and G. P. Tepman, “Study of processes for obtaining and using dielectric films based on aluminum nitride,” in Methods of Production, Properties, and Application of Nitrides. A Collection of Papers (Izd. IPM AN USSR, Kiev, 1972), pp 201-208.

Thimann, M.

E. Tiede, M. Thimann, and K. Sensse, “Über phosphorescenzfähiges, durch Siliciumaktiviertes Aluminiumnitrid,” Ber. 61, 1568 (1928).

Tiede, E.

E. Tiede, M. Thimann, and K. Sensse, “Über phosphorescenzfähiges, durch Siliciumaktiviertes Aluminiumnitrid,” Ber. 61, 1568 (1928).

Turovskaya, T. S.

A. V. Stepuro, T. S. Turovskaya, G. A. Muranova, and A. F. Perveev, “The effect of the ion-processing of substrates on the initial growth stage of metal films,” Opt. Mekh. Prom. No. 11, 30 (1983) A. V. Stepuro, T. S. Turovskaya, G. A. Muranova, and A. F. Perveev[Sov. J. Opt. Technol. 50, 699 (1983)].

Vergara, L.

E. Iborra, J. Olivares, M. Clement, L. Vergara, A. Sanz-Hervas, and J. Sangrador, “Piezoelectric properties and residual stress of sputtered AlN thin films for MEMS applications,” Sens. Actuators, A 115, 501 (2004).
[CrossRef]

Warren, J. W.

J. W. Warren, “Measurement of appearance potentials of ions produced by electron impact using a mass spectrometer,” Nature (London) 165, 810 (1950).
[CrossRef]

Wilson, I. H.

Z. R. Song, Y. H. Yu, S. C. Zou, Z. H. Zheng, D. S. Shen, E. Z. Luo, Z. Xie, B. Sundaravel, S. P. Wong, and I. H. Wilson, “Simulation and characterization on properties of AlN films for SOI application,” Thin Solid Films 459, 41 (2004).

Witzke, H. D.

H. D. Witzke, “Ein Beitrag zur orientiren Abscheidung halbleitender Verbinddungen aus der Dampfphase am Beispiel AlN-Al4C3,” Z. Phys. Chem. (Munich) 221, 253 (1962).

Wolf, J.

J. Wolf, “Über Darstelling von Aluminiumnitrid aus den Element,” Z. Anorg. Allg. Chem. 83, 159 (1913).

Wong, S. P.

Z. R. Song, Y. H. Yu, S. C. Zou, Z. H. Zheng, D. S. Shen, E. Z. Luo, Z. Xie, B. Sundaravel, S. P. Wong, and I. H. Wilson, “Simulation and characterization on properties of AlN films for SOI application,” Thin Solid Films 459, 41 (2004).

Wu, Long

Kok-Wan Tay, Cheng-Liang Huang, Long Wu, and Meng-Shan Lin, “Performance characterization of thin AlN films deposited on Mo electrode for thin-film bulk acoustic wave resonators,” Jpn. J. Appl. Phys. Pt. 1 43, 5510 (2004).

Xie, Z.

Z. R. Song, Y. H. Yu, S. C. Zou, Z. H. Zheng, D. S. Shen, E. Z. Luo, Z. Xie, B. Sundaravel, S. P. Wong, and I. H. Wilson, “Simulation and characterization on properties of AlN films for SOI application,” Thin Solid Films 459, 41 (2004).

Yu, Y. H.

Z. R. Song, Y. H. Yu, S. C. Zou, Z. H. Zheng, D. S. Shen, E. Z. Luo, Z. Xie, B. Sundaravel, S. P. Wong, and I. H. Wilson, “Simulation and characterization on properties of AlN films for SOI application,” Thin Solid Films 459, 41 (2004).

Zheng, Z. H.

Z. R. Song, Y. H. Yu, S. C. Zou, Z. H. Zheng, D. S. Shen, E. Z. Luo, Z. Xie, B. Sundaravel, S. P. Wong, and I. H. Wilson, “Simulation and characterization on properties of AlN films for SOI application,” Thin Solid Films 459, 41 (2004).

Zou, S. C.

Z. R. Song, Y. H. Yu, S. C. Zou, Z. H. Zheng, D. S. Shen, E. Z. Luo, Z. Xie, B. Sundaravel, S. P. Wong, and I. H. Wilson, “Simulation and characterization on properties of AlN films for SOI application,” Thin Solid Films 459, 41 (2004).

Appl. Opt. (2)

Ber. (1)

E. Tiede, M. Thimann, and K. Sensse, “Über phosphorescenzfähiges, durch Siliciumaktiviertes Aluminiumnitrid,” Ber. 61, 1568 (1928).

Crit. Rev. Solid State Mater. Sci. (1)

J. P. Hobson, “Physical adsorption,” Crit. Rev. Solid State Mater. Sci. 4, 221 (1973).

Jpn. J. Appl. Phys. Pt. 1 (1)

Kok-Wan Tay, Cheng-Liang Huang, Long Wu, and Meng-Shan Lin, “Performance characterization of thin AlN films deposited on Mo electrode for thin-film bulk acoustic wave resonators,” Jpn. J. Appl. Phys. Pt. 1 43, 5510 (2004).

Nature (London) (1)

J. W. Warren, “Measurement of appearance potentials of ions produced by electron impact using a mass spectrometer,” Nature (London) 165, 810 (1950).
[CrossRef]

Opt. Mekh. Prom. (1)

A. V. Stepuro, T. S. Turovskaya, G. A. Muranova, and A. F. Perveev, “The effect of the ion-processing of substrates on the initial growth stage of metal films,” Opt. Mekh. Prom. No. 11, 30 (1983) A. V. Stepuro, T. S. Turovskaya, G. A. Muranova, and A. F. Perveev[Sov. J. Opt. Technol. 50, 699 (1983)].

Opt. Zh. (2)

A. V. Mikhaĭlov, G. A. Muranova, and N. N. Smirnov, “Determining the colorimetric parameters and optimizing the design of colored mirrors based on metal-dielectric interference systems,” Opt. Zh. 68, No. 8, 30 (2001) A. V. Mikhaĭlov, G. A. Muranova, and N. N. Smirnov[J. Opt. Technol. 68, 564 (2001)].

V. T. Miller and A. F. Perveev, “Device for ion-cleaning substrates and ion-polishing layers,” Opt. Zh. No. 2, 72 (1993) V. T. Miller and A. F. Perveev[Sov. J. Opt. Technol. 60, 143 (1993)].

Sens. Actuators, A (1)

E. Iborra, J. Olivares, M. Clement, L. Vergara, A. Sanz-Hervas, and J. Sangrador, “Piezoelectric properties and residual stress of sputtered AlN thin films for MEMS applications,” Sens. Actuators, A 115, 501 (2004).
[CrossRef]

Thin Solid Films (1)

Z. R. Song, Y. H. Yu, S. C. Zou, Z. H. Zheng, D. S. Shen, E. Z. Luo, Z. Xie, B. Sundaravel, S. P. Wong, and I. H. Wilson, “Simulation and characterization on properties of AlN films for SOI application,” Thin Solid Films 459, 41 (2004).

Trudy Gos. Opt. Inst. (1)

A. F. Perveev, “Ion processing of optical materials and coatings,” Trudy Gos. Opt. Inst. 52, No. 186, 58 (1983).

Z. Anorg. Allg. Chem. (3)

T. Renner, “Über Aluminiumnitrid,” Z. Anorg. Allg. Chem. 298, 22 (1959).
[CrossRef]

F. Fichter, “Über Aluminiumnitrid,” Z. Anorg. Allg. Chem. 54, 322 (1907).

J. Wolf, “Über Darstelling von Aluminiumnitrid aus den Element,” Z. Anorg. Allg. Chem. 83, 159 (1913).

Z. Phys. Chem. (Munich) (1)

H. D. Witzke, “Ein Beitrag zur orientiren Abscheidung halbleitender Verbinddungen aus der Dampfphase am Beispiel AlN-Al4C3,” Z. Phys. Chem. (Munich) 221, 253 (1962).

Other (7)

B. S. Danilin, and V. K. Syrchin, Magnetron Sputtering Systems (Radio i Svyaz', Moscow, 1982).

S. Morrison, The Chemical Physics of Surfaces (Plenum Press, New York, 1977; Mir, Moscow, 1980).

A. Fischer, “Verfahren zur Herstellung und Dotierung von Aluminiumnitrid-kristallen,” Patent FRG N 1128410 (1962).

H. R. Hutton, “Piezoelectric device utilizing aluminum nitride,” U.S. Patent 3090876 (1963).

V.N.Kondrat'eva, ed., Breakdown Energies of Chemical Bonds. Ionization Potentials and Electron Affinities. A Handbook (Nauka, Moscow, 1974).

S. A. Kutolin, I. V. Stepanov, and N. I. Boĭkin, “The effect of UV irradiation on the crystallization process of aluminum nitride and oxide films obtained by vacuum evaporation,” Élektr. Ser. Polupr. Pribory ISL No. 001628, 1 (1971).

I. V. Stepanov, S. A. Kutolin, M. I. Antonov, and G. P. Tepman, “Study of processes for obtaining and using dielectric films based on aluminum nitride,” in Methods of Production, Properties, and Application of Nitrides. A Collection of Papers (Izd. IPM AN USSR, Kiev, 1972), pp 201-208.

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.