Abstract

This paper discusses the process of triggering photon avalanche in deep doped quantum wells. The threshold intensities of the IR light that causes the avalanche are hundreds of kilowatts per square centimeter. The energies for switching the system between states with strong and weak absorption of the pump light are tens of femtojoules per square micrometer.

Photon avalanche effect in quantum wells: controlling light with light

A. A. Popov, A. V. Ivanov, and E. Yu. Perlin
J. Opt. Soc. Am. B 36(11) 3117-3124 (2019)

Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection

Feng-Wen Huang, Jinn-Kong Sheu, Ming-Lun Lee, Shang-Ju Tu, Wei-Chih Lai, Wen-Che Tsai, and Wen-Hao Chang
Opt. Express 19(S6) A1211-A1218 (2011)

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M. V. Korolkov, I. A. Khodasevich, A. S. Grabtchikov, D. Mogilevtsev, and E. V. Kolobkova
Opt. Lett. 44(23) 5880-5883 (2019)

Non-stationary testing of avalanche-like behavior of up-conversion luminescence

M. V. Korolkov
J. Opt. Soc. Am. B 37(11) 3239-3242 (2020)

Effect of a magnetic field on intersubband polaritons in a quantum well: strong to weak coupling conversion

A. A. Pervishko, O. V. Kibis, and I. A. Shelykh
Opt. Lett. 41(15) 3595-3598 (2016)