The absorption behavior has been studied in the 120-1000-nm region in modern high-purity samples of MgF2,CaF2, and BaF2 crystals when they undergo prolonged irradiation in air by an electron beam with energy less than 280 keV (about 10<sup>4</sup> pulses, total fluence about 20 kJ/cm<sup>2</sup>). The induced optical density in CaF2 and BaF2 in the 200-1000-nm region was about 0.04-0.1 after such irradiation. Absorption in the UV region in MgF2 samples monotonically increases with irradiation, and they have almost completely lost their transparency in the 260-nm region at fluences of about 500 J/cm<sup>2</sup>. The studies of the crystals showed that the electron-beam induced absorption is largely determined by impurities that were either already present or that entered the samples while they were being irradiated. © 2005 Optical Society of America
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
Login to access OSA Member Subscription