Abstract

A process has been developed for producing linear and two-dimensional array-type photodetector modules (PDMs), including the fabrication of photodetector structures based on heteroepitaxial layers of Cd<sub>x</sub>Hg<sub>1−x</sub>Te and GaAs/AlGaAs grown by molecular-beam epitaxy, fabrication of two-dimensional and linear arrays of silicon multiplexers, and hybrid assembly of PDMs consisting of a photodetector structure and a multiplexer by means of indium microposts. The photoelectric parameters are given for two-dimensional and linear array-type PDMs based on photodiodes for the mid-IR (3-5.5 µm) and far-IR (8-12 µm) regions, operating at temperatures of 78-80 K and 200-220 K. © 2005 Optical Society of America

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