This paper presents the results of a study of the structural, optical, and photoelectric properties of single-crystal PbGa2S4 . The theory of direct optical transitions is used to determine the optical band gap of the indicated compound as Eg52.78 eV. The spectral dependences of the photocurrent at various temperatures and applied voltages show that local centers that arise during the production of the crystal are present inside the band gap. The position of the energy level of slow recombination centers (r centers) is found to be equal to 0.24 eV.

PDF Article

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription