Abstract
This paper presents the results of studies of the photoluminescence intensity distribution in
various sections of the surface of epitaxial layers of gallium arsenide grown on silicon substrates.
It is established that the epitaxial layers have a block structure in the form of radiative areas
separated by dark (nonradiative) boundaries, whose shape depends on the substrate's
crystallographic orientation. It is assumed that the block structure is associated with internal
stresses that arise in the epitaxial layers because of differences of the lattice constants and thermal
expansion coefficients of the connected materials.
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