Abstract

A method has been developed for analyzing the temperature resolution of far-IR and mid-IR photoreceivers. The features of creating silicon multiplexers for such photoreceivers are discussed. The noise-equivalent temperature difference is analyzed for IR photoreceivers based on silicon multiplexers with framewise accumulation from photodetectors based on quantum-well multilayer structures. The silicon multiplexers thus developed are compared in order to use photosensitive chips, including those with increased dark currents, to create IR photoreceivers with temperature resolution at the response level of similar photoreceivers from leading companies. The structural–technological principles of the creation of mosaic photoreceivers are developed for the case of superhigh size. The technological level thus achieved is discussed for high-precision microassembly of submodule chips into mosaic photoreceivers. Methods are proposed for forming the multispectral photosensitivity response of the mosaic photoreceivers. A comparative analysis is carried out of the size of the “blind zone” of different defining materials.

© 2020 Optical Society of America

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