Abstract

The results of numerical modeling of the process of multi-pulse femtosecond laser photoexcitation and heating of monocrystalline silicon are presented. It is shown that starting from a certain level of irradiance at pulse repetition rates of 10–1000 Hz, the structural changes in the surface that occur between pulses influence the spatiotemporal distribution of the electron plasma in the near-surface layer of the semiconductor at the time of irradiation with a subsequent pulse and thus accumulate, forming a stable surface microstructure in the irradiated region. A mechanism is proposed for the formation of a two-dimensional periodic microrelief on a silicon surface, which is based on a change in the type of a surface excited by electromagnetic waves with an increasing number of irradiating femtosecond pulses.

© 2017 Optical Society of America

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