Abstract

Based on the method of white-light interferometry, a technique for measuring a surface profile with an accuracy of 0.05 nm with a measurement time of 100 ms was developed. It is compared with similar methods described in the literature. The surface profile of a silicon wafer was measured after mechanical polishing. Comparison of the results obtained here with the results of measurements with the industrial system ZYGO-7100 showed promise of creating devices that operate on the proposed principle.

© 2018 Optical Society of America

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