Abstract

This paper discusses optical transitions in a structure with deep quantum wells with a type-I band diagram, containing deep impurities in the barrier region. The tunnel-Hamiltonian formalism is used to obtain expressions for the phototransition rates between the states in the valence band in the quantum well and the levels of the deep impurity centers. It is shown that the photocharging rate of the impurities sharply increases when the light frequency is above a certain threshold.

© 2014 Optical Society of America

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription