Abstract

The electron states and optical properties of a dense ordered array of quantum dots (QDs) based on GaN and AlN crystals of the wurtzite (w) structure have been studied by the pseudopotential method, with the hexagonal symmetry, deformations, and internal electric fields accurately taken into account. It is shown that the minimum of the first electron miniband at the center of the Brillouin zone of the QD superlattice originates from a state of the central Γ<sub>1</sub> valley of the conduction band of the binary crystals, while the higher levels are associated with the states of the U side valleys and the neighborhood of the Γ valley. The first absorption peak of light polarized in the basal plane, e⊥c, is associated with transitions from the lower level with symmetry Γ<sub>1</sub> in the quantum Γ well to two close-lying levels with symmetry Γ<sub>3</sub>. The absorption of light with polarization parallel to the hexagonal axis, e∥c, is weaker, and the peak is shifted toward higher energies. Because of this, an array of small GaN QDs can be used in IR photodetectors with the light incident on the front. A technology for obtaining arrays of small QDs with high density is proposed and developed.

© 2009 Optical Society of America

PDF Article

References

  • View by:
  • |
  • |
  • |

  1. P. Tronc, K. S. Zhuravlev, V. G. Mansurov, G. F. Karavaev, S. N. Grinyaev, I. Milosevic, and M. Damnjanovic, “Optical properties of photodetectors based on wurtzite quantum dot arrays,” Phys. Rev. B 77, 165328 (2008).
    [CrossRef]
  2. S. N. Grinyaev and V. V. Lopatin, “Electronic structure of graphitelike and rhombohedral boron nitride,” Izv. Vyssh. Uchebn. Zaved. Fiz. 35, No. 227 (1992).
  3. A. D. Andreev and E. P. O'Reilly, “Theory of the electronic structure of GaN/AlN hexagonal quantum dots,” Phys. Rev. B 62, 15851 (2000).
    [CrossRef]
  4. A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirley, and S. G. Louie, “Quasi-particle band structure of AlN and GaN,” Phys. Rev. B 48, 11810 (1993).
    [CrossRef]
  5. D. Fritsch, H. Schmidt, and M. Grundmann, “Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN,” Phys. Rev. B 67, 235205 (2003).
    [CrossRef]
  6. P. Perlin, I. Gorczyca, S. Porowski, T. Suski, N. E. Christensen, and A. Polian, “III-V semiconducting nitrides: Physical properties under pressure,” Jpn. J. Appl. Phys., Part 1 32, 334 (1993).
    [CrossRef]
  7. Y. C. Yeo, T. C. Chong, and M. F. Li, “Electronic band structures and effective-mass parameters of wurtzite GaN and InN,” J. Appl. Phys. 83, 1429 (1998).
    [CrossRef]
  8. W. R. L. Lambrecht, B. Segall, J. Rife, W. R. Hunter, and D. K. Wickenden, “UV reflectivity of GaN: Theory and experiment,” Phys. Rev. B 51, 13516 (1995).
    [CrossRef]
  9. P. B. Perry and R. F. Rutz, “The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process,” Appl. Phys. Lett. 33, 319 (1978).
    [CrossRef]
  10. S. Loughin, R. H. French, W. Y. Ching, Y. N. Xu, and G. A. Slack, “Electronic structure of aluminium nitride: theory and experiment,” Appl. Phys. Lett. 63, 1182 (1993).
    [CrossRef]
  11. Y. C. Yeo, T. C. Chong, M. F. Li, and W. J. Fan, “Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1−xN quantum-well lasers,” IEEE J. Quantum Electron. 34, No. 3, 526 (1998).
    [CrossRef]
  12. V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K. S. Zhuravlev, and Ph. Vennegues, “Investigation of growth mechanisms of GaN quantum dots on (0001) AlN surface by ammonia MBE,” Phys. Status Solidi C 3, 1548 (2006).
    [CrossRef]
  13. V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, and K. S. Zhuravlev, “Study of the surface morphology of AlGaN during MBE growth by the method of fast-electron diffraction,” in Abstracts of Reports of the Sixth All-Russia Conference on Nitrides of Gallium, Indium, and Aluminum--Structures and Devices, St. Petersburg, 2008, pp. 37-38.
  14. A. Yu. Nikitin, V. G. Mansurov, Yu. G. Galitsyn, K. S. Zhuravlev, and P. Tronc, “Exponential growth of the density of GaN and AlN nuclei under conditions of ammonium molecular-beam epitaxy,” in Abstracts of Reports of the Sixth All-Russia Conference on Nitrides of Gallium, Indium, and Aluminum--Structures and Devices, St. Petersburg, 2008, pp. 49-50.
  15. V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, S. N. Svitasheva, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “AlN growth on sapphire substrate by ammonia MBE,” J. Cryst. Growth 300, 145 (2007).
    [CrossRef]
  16. V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, E. A. Kolosovsky, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “Continuous order-disorder phase transition (2×2)-(1×1) on the (0001) AlN surface,” Phys. Status Solidi C 4, 2498 (2007).
    [CrossRef]
  17. F. Widmann, J. Simon, N. T. Pelekanos, B. Daudin, G. Feuillet, J. L. Rouvière, and G. Fishman, “Giant piezoelectric effect in GaN self-assembled quantum dots,” Microelectron. J. 30, 353 (1999).
    [CrossRef]

2008 (1)

P. Tronc, K. S. Zhuravlev, V. G. Mansurov, G. F. Karavaev, S. N. Grinyaev, I. Milosevic, and M. Damnjanovic, “Optical properties of photodetectors based on wurtzite quantum dot arrays,” Phys. Rev. B 77, 165328 (2008).
[CrossRef]

2007 (2)

V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, S. N. Svitasheva, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “AlN growth on sapphire substrate by ammonia MBE,” J. Cryst. Growth 300, 145 (2007).
[CrossRef]

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, E. A. Kolosovsky, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “Continuous order-disorder phase transition (2×2)-(1×1) on the (0001) AlN surface,” Phys. Status Solidi C 4, 2498 (2007).
[CrossRef]

2006 (1)

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K. S. Zhuravlev, and Ph. Vennegues, “Investigation of growth mechanisms of GaN quantum dots on (0001) AlN surface by ammonia MBE,” Phys. Status Solidi C 3, 1548 (2006).
[CrossRef]

2003 (1)

D. Fritsch, H. Schmidt, and M. Grundmann, “Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN,” Phys. Rev. B 67, 235205 (2003).
[CrossRef]

2000 (1)

A. D. Andreev and E. P. O'Reilly, “Theory of the electronic structure of GaN/AlN hexagonal quantum dots,” Phys. Rev. B 62, 15851 (2000).
[CrossRef]

1999 (1)

F. Widmann, J. Simon, N. T. Pelekanos, B. Daudin, G. Feuillet, J. L. Rouvière, and G. Fishman, “Giant piezoelectric effect in GaN self-assembled quantum dots,” Microelectron. J. 30, 353 (1999).
[CrossRef]

1998 (2)

Y. C. Yeo, T. C. Chong, M. F. Li, and W. J. Fan, “Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1−xN quantum-well lasers,” IEEE J. Quantum Electron. 34, No. 3, 526 (1998).
[CrossRef]

Y. C. Yeo, T. C. Chong, and M. F. Li, “Electronic band structures and effective-mass parameters of wurtzite GaN and InN,” J. Appl. Phys. 83, 1429 (1998).
[CrossRef]

1995 (1)

W. R. L. Lambrecht, B. Segall, J. Rife, W. R. Hunter, and D. K. Wickenden, “UV reflectivity of GaN: Theory and experiment,” Phys. Rev. B 51, 13516 (1995).
[CrossRef]

1993 (3)

P. Perlin, I. Gorczyca, S. Porowski, T. Suski, N. E. Christensen, and A. Polian, “III-V semiconducting nitrides: Physical properties under pressure,” Jpn. J. Appl. Phys., Part 1 32, 334 (1993).
[CrossRef]

A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirley, and S. G. Louie, “Quasi-particle band structure of AlN and GaN,” Phys. Rev. B 48, 11810 (1993).
[CrossRef]

S. Loughin, R. H. French, W. Y. Ching, Y. N. Xu, and G. A. Slack, “Electronic structure of aluminium nitride: theory and experiment,” Appl. Phys. Lett. 63, 1182 (1993).
[CrossRef]

1992 (1)

S. N. Grinyaev and V. V. Lopatin, “Electronic structure of graphitelike and rhombohedral boron nitride,” Izv. Vyssh. Uchebn. Zaved. Fiz. 35, No. 227 (1992).

1978 (1)

P. B. Perry and R. F. Rutz, “The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process,” Appl. Phys. Lett. 33, 319 (1978).
[CrossRef]

Andreev, A. D.

A. D. Andreev and E. P. O'Reilly, “Theory of the electronic structure of GaN/AlN hexagonal quantum dots,” Phys. Rev. B 62, 15851 (2000).
[CrossRef]

Ching, W. Y.

S. Loughin, R. H. French, W. Y. Ching, Y. N. Xu, and G. A. Slack, “Electronic structure of aluminium nitride: theory and experiment,” Appl. Phys. Lett. 63, 1182 (1993).
[CrossRef]

Chong, T. C.

Y. C. Yeo, T. C. Chong, M. F. Li, and W. J. Fan, “Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1−xN quantum-well lasers,” IEEE J. Quantum Electron. 34, No. 3, 526 (1998).
[CrossRef]

Y. C. Yeo, T. C. Chong, and M. F. Li, “Electronic band structures and effective-mass parameters of wurtzite GaN and InN,” J. Appl. Phys. 83, 1429 (1998).
[CrossRef]

Christensen, N. E.

P. Perlin, I. Gorczyca, S. Porowski, T. Suski, N. E. Christensen, and A. Polian, “III-V semiconducting nitrides: Physical properties under pressure,” Jpn. J. Appl. Phys., Part 1 32, 334 (1993).
[CrossRef]

Cohen, M. L.

A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirley, and S. G. Louie, “Quasi-particle band structure of AlN and GaN,” Phys. Rev. B 48, 11810 (1993).
[CrossRef]

Corkill, J. L.

A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirley, and S. G. Louie, “Quasi-particle band structure of AlN and GaN,” Phys. Rev. B 48, 11810 (1993).
[CrossRef]

Damnjanovic, M.

P. Tronc, K. S. Zhuravlev, V. G. Mansurov, G. F. Karavaev, S. N. Grinyaev, I. Milosevic, and M. Damnjanovic, “Optical properties of photodetectors based on wurtzite quantum dot arrays,” Phys. Rev. B 77, 165328 (2008).
[CrossRef]

Daudin, B.

F. Widmann, J. Simon, N. T. Pelekanos, B. Daudin, G. Feuillet, J. L. Rouvière, and G. Fishman, “Giant piezoelectric effect in GaN self-assembled quantum dots,” Microelectron. J. 30, 353 (1999).
[CrossRef]

Dobos, L.

V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, S. N. Svitasheva, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “AlN growth on sapphire substrate by ammonia MBE,” J. Cryst. Growth 300, 145 (2007).
[CrossRef]

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, E. A. Kolosovsky, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “Continuous order-disorder phase transition (2×2)-(1×1) on the (0001) AlN surface,” Phys. Status Solidi C 4, 2498 (2007).
[CrossRef]

Fan, W. J.

Y. C. Yeo, T. C. Chong, M. F. Li, and W. J. Fan, “Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1−xN quantum-well lasers,” IEEE J. Quantum Electron. 34, No. 3, 526 (1998).
[CrossRef]

Feuillet, G.

F. Widmann, J. Simon, N. T. Pelekanos, B. Daudin, G. Feuillet, J. L. Rouvière, and G. Fishman, “Giant piezoelectric effect in GaN self-assembled quantum dots,” Microelectron. J. 30, 353 (1999).
[CrossRef]

Fishman, G.

F. Widmann, J. Simon, N. T. Pelekanos, B. Daudin, G. Feuillet, J. L. Rouvière, and G. Fishman, “Giant piezoelectric effect in GaN self-assembled quantum dots,” Microelectron. J. 30, 353 (1999).
[CrossRef]

French, R. H.

S. Loughin, R. H. French, W. Y. Ching, Y. N. Xu, and G. A. Slack, “Electronic structure of aluminium nitride: theory and experiment,” Appl. Phys. Lett. 63, 1182 (1993).
[CrossRef]

Fritsch, D.

D. Fritsch, H. Schmidt, and M. Grundmann, “Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN,” Phys. Rev. B 67, 235205 (2003).
[CrossRef]

Galitsyn, Yu. G.

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, E. A. Kolosovsky, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “Continuous order-disorder phase transition (2×2)-(1×1) on the (0001) AlN surface,” Phys. Status Solidi C 4, 2498 (2007).
[CrossRef]

V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, S. N. Svitasheva, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “AlN growth on sapphire substrate by ammonia MBE,” J. Cryst. Growth 300, 145 (2007).
[CrossRef]

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K. S. Zhuravlev, and Ph. Vennegues, “Investigation of growth mechanisms of GaN quantum dots on (0001) AlN surface by ammonia MBE,” Phys. Status Solidi C 3, 1548 (2006).
[CrossRef]

A. Yu. Nikitin, V. G. Mansurov, Yu. G. Galitsyn, K. S. Zhuravlev, and P. Tronc, “Exponential growth of the density of GaN and AlN nuclei under conditions of ammonium molecular-beam epitaxy,” in Abstracts of Reports of the Sixth All-Russia Conference on Nitrides of Gallium, Indium, and Aluminum--Structures and Devices, St. Petersburg, 2008, pp. 49-50.

V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, and K. S. Zhuravlev, “Study of the surface morphology of AlGaN during MBE growth by the method of fast-electron diffraction,” in Abstracts of Reports of the Sixth All-Russia Conference on Nitrides of Gallium, Indium, and Aluminum--Structures and Devices, St. Petersburg, 2008, pp. 37-38.

Gorczyca, I.

P. Perlin, I. Gorczyca, S. Porowski, T. Suski, N. E. Christensen, and A. Polian, “III-V semiconducting nitrides: Physical properties under pressure,” Jpn. J. Appl. Phys., Part 1 32, 334 (1993).
[CrossRef]

Grinyaev, S. N.

P. Tronc, K. S. Zhuravlev, V. G. Mansurov, G. F. Karavaev, S. N. Grinyaev, I. Milosevic, and M. Damnjanovic, “Optical properties of photodetectors based on wurtzite quantum dot arrays,” Phys. Rev. B 77, 165328 (2008).
[CrossRef]

S. N. Grinyaev and V. V. Lopatin, “Electronic structure of graphitelike and rhombohedral boron nitride,” Izv. Vyssh. Uchebn. Zaved. Fiz. 35, No. 227 (1992).

Grundmann, M.

D. Fritsch, H. Schmidt, and M. Grundmann, “Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN,” Phys. Rev. B 67, 235205 (2003).
[CrossRef]

Horvath, Z. E.

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, E. A. Kolosovsky, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “Continuous order-disorder phase transition (2×2)-(1×1) on the (0001) AlN surface,” Phys. Status Solidi C 4, 2498 (2007).
[CrossRef]

V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, S. N. Svitasheva, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “AlN growth on sapphire substrate by ammonia MBE,” J. Cryst. Growth 300, 145 (2007).
[CrossRef]

Hunter, W. R.

W. R. L. Lambrecht, B. Segall, J. Rife, W. R. Hunter, and D. K. Wickenden, “UV reflectivity of GaN: Theory and experiment,” Phys. Rev. B 51, 13516 (1995).
[CrossRef]

Karavaev, G. F.

P. Tronc, K. S. Zhuravlev, V. G. Mansurov, G. F. Karavaev, S. N. Grinyaev, I. Milosevic, and M. Damnjanovic, “Optical properties of photodetectors based on wurtzite quantum dot arrays,” Phys. Rev. B 77, 165328 (2008).
[CrossRef]

Kolosovsky, E. A.

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, E. A. Kolosovsky, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “Continuous order-disorder phase transition (2×2)-(1×1) on the (0001) AlN surface,” Phys. Status Solidi C 4, 2498 (2007).
[CrossRef]

Lambrecht, W. R. L.

W. R. L. Lambrecht, B. Segall, J. Rife, W. R. Hunter, and D. K. Wickenden, “UV reflectivity of GaN: Theory and experiment,” Phys. Rev. B 51, 13516 (1995).
[CrossRef]

Li, M. F.

Y. C. Yeo, T. C. Chong, M. F. Li, and W. J. Fan, “Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1−xN quantum-well lasers,” IEEE J. Quantum Electron. 34, No. 3, 526 (1998).
[CrossRef]

Y. C. Yeo, T. C. Chong, and M. F. Li, “Electronic band structures and effective-mass parameters of wurtzite GaN and InN,” J. Appl. Phys. 83, 1429 (1998).
[CrossRef]

Lopatin, V. V.

S. N. Grinyaev and V. V. Lopatin, “Electronic structure of graphitelike and rhombohedral boron nitride,” Izv. Vyssh. Uchebn. Zaved. Fiz. 35, No. 227 (1992).

Loughin, S.

S. Loughin, R. H. French, W. Y. Ching, Y. N. Xu, and G. A. Slack, “Electronic structure of aluminium nitride: theory and experiment,” Appl. Phys. Lett. 63, 1182 (1993).
[CrossRef]

Louie, S. G.

A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirley, and S. G. Louie, “Quasi-particle band structure of AlN and GaN,” Phys. Rev. B 48, 11810 (1993).
[CrossRef]

Mansurov, V. G.

P. Tronc, K. S. Zhuravlev, V. G. Mansurov, G. F. Karavaev, S. N. Grinyaev, I. Milosevic, and M. Damnjanovic, “Optical properties of photodetectors based on wurtzite quantum dot arrays,” Phys. Rev. B 77, 165328 (2008).
[CrossRef]

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, E. A. Kolosovsky, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “Continuous order-disorder phase transition (2×2)-(1×1) on the (0001) AlN surface,” Phys. Status Solidi C 4, 2498 (2007).
[CrossRef]

V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, S. N. Svitasheva, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “AlN growth on sapphire substrate by ammonia MBE,” J. Cryst. Growth 300, 145 (2007).
[CrossRef]

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K. S. Zhuravlev, and Ph. Vennegues, “Investigation of growth mechanisms of GaN quantum dots on (0001) AlN surface by ammonia MBE,” Phys. Status Solidi C 3, 1548 (2006).
[CrossRef]

A. Yu. Nikitin, V. G. Mansurov, Yu. G. Galitsyn, K. S. Zhuravlev, and P. Tronc, “Exponential growth of the density of GaN and AlN nuclei under conditions of ammonium molecular-beam epitaxy,” in Abstracts of Reports of the Sixth All-Russia Conference on Nitrides of Gallium, Indium, and Aluminum--Structures and Devices, St. Petersburg, 2008, pp. 49-50.

V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, and K. S. Zhuravlev, “Study of the surface morphology of AlGaN during MBE growth by the method of fast-electron diffraction,” in Abstracts of Reports of the Sixth All-Russia Conference on Nitrides of Gallium, Indium, and Aluminum--Structures and Devices, St. Petersburg, 2008, pp. 37-38.

Milosevic, I.

P. Tronc, K. S. Zhuravlev, V. G. Mansurov, G. F. Karavaev, S. N. Grinyaev, I. Milosevic, and M. Damnjanovic, “Optical properties of photodetectors based on wurtzite quantum dot arrays,” Phys. Rev. B 77, 165328 (2008).
[CrossRef]

Nikitin, A. Yu.

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K. S. Zhuravlev, and Ph. Vennegues, “Investigation of growth mechanisms of GaN quantum dots on (0001) AlN surface by ammonia MBE,” Phys. Status Solidi C 3, 1548 (2006).
[CrossRef]

A. Yu. Nikitin, V. G. Mansurov, Yu. G. Galitsyn, K. S. Zhuravlev, and P. Tronc, “Exponential growth of the density of GaN and AlN nuclei under conditions of ammonium molecular-beam epitaxy,” in Abstracts of Reports of the Sixth All-Russia Conference on Nitrides of Gallium, Indium, and Aluminum--Structures and Devices, St. Petersburg, 2008, pp. 49-50.

V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, and K. S. Zhuravlev, “Study of the surface morphology of AlGaN during MBE growth by the method of fast-electron diffraction,” in Abstracts of Reports of the Sixth All-Russia Conference on Nitrides of Gallium, Indium, and Aluminum--Structures and Devices, St. Petersburg, 2008, pp. 37-38.

O'Reilly, E. P.

A. D. Andreev and E. P. O'Reilly, “Theory of the electronic structure of GaN/AlN hexagonal quantum dots,” Phys. Rev. B 62, 15851 (2000).
[CrossRef]

Osvath, Z.

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, E. A. Kolosovsky, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “Continuous order-disorder phase transition (2×2)-(1×1) on the (0001) AlN surface,” Phys. Status Solidi C 4, 2498 (2007).
[CrossRef]

V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, S. N. Svitasheva, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “AlN growth on sapphire substrate by ammonia MBE,” J. Cryst. Growth 300, 145 (2007).
[CrossRef]

Pecz, B.

V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, S. N. Svitasheva, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “AlN growth on sapphire substrate by ammonia MBE,” J. Cryst. Growth 300, 145 (2007).
[CrossRef]

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, E. A. Kolosovsky, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “Continuous order-disorder phase transition (2×2)-(1×1) on the (0001) AlN surface,” Phys. Status Solidi C 4, 2498 (2007).
[CrossRef]

Pelekanos, N. T.

F. Widmann, J. Simon, N. T. Pelekanos, B. Daudin, G. Feuillet, J. L. Rouvière, and G. Fishman, “Giant piezoelectric effect in GaN self-assembled quantum dots,” Microelectron. J. 30, 353 (1999).
[CrossRef]

Perlin, P.

P. Perlin, I. Gorczyca, S. Porowski, T. Suski, N. E. Christensen, and A. Polian, “III-V semiconducting nitrides: Physical properties under pressure,” Jpn. J. Appl. Phys., Part 1 32, 334 (1993).
[CrossRef]

Perry, P. B.

P. B. Perry and R. F. Rutz, “The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process,” Appl. Phys. Lett. 33, 319 (1978).
[CrossRef]

Polian, A.

P. Perlin, I. Gorczyca, S. Porowski, T. Suski, N. E. Christensen, and A. Polian, “III-V semiconducting nitrides: Physical properties under pressure,” Jpn. J. Appl. Phys., Part 1 32, 334 (1993).
[CrossRef]

Porowski, S.

P. Perlin, I. Gorczyca, S. Porowski, T. Suski, N. E. Christensen, and A. Polian, “III-V semiconducting nitrides: Physical properties under pressure,” Jpn. J. Appl. Phys., Part 1 32, 334 (1993).
[CrossRef]

Rife, J.

W. R. L. Lambrecht, B. Segall, J. Rife, W. R. Hunter, and D. K. Wickenden, “UV reflectivity of GaN: Theory and experiment,” Phys. Rev. B 51, 13516 (1995).
[CrossRef]

Rouvière, J. L.

F. Widmann, J. Simon, N. T. Pelekanos, B. Daudin, G. Feuillet, J. L. Rouvière, and G. Fishman, “Giant piezoelectric effect in GaN self-assembled quantum dots,” Microelectron. J. 30, 353 (1999).
[CrossRef]

Rubio, A.

A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirley, and S. G. Louie, “Quasi-particle band structure of AlN and GaN,” Phys. Rev. B 48, 11810 (1993).
[CrossRef]

Rutz, R. F.

P. B. Perry and R. F. Rutz, “The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process,” Appl. Phys. Lett. 33, 319 (1978).
[CrossRef]

Schmidt, H.

D. Fritsch, H. Schmidt, and M. Grundmann, “Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN,” Phys. Rev. B 67, 235205 (2003).
[CrossRef]

Segall, B.

W. R. L. Lambrecht, B. Segall, J. Rife, W. R. Hunter, and D. K. Wickenden, “UV reflectivity of GaN: Theory and experiment,” Phys. Rev. B 51, 13516 (1995).
[CrossRef]

Shirley, E. L.

A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirley, and S. G. Louie, “Quasi-particle band structure of AlN and GaN,” Phys. Rev. B 48, 11810 (1993).
[CrossRef]

Simon, J.

F. Widmann, J. Simon, N. T. Pelekanos, B. Daudin, G. Feuillet, J. L. Rouvière, and G. Fishman, “Giant piezoelectric effect in GaN self-assembled quantum dots,” Microelectron. J. 30, 353 (1999).
[CrossRef]

Slack, G. A.

S. Loughin, R. H. French, W. Y. Ching, Y. N. Xu, and G. A. Slack, “Electronic structure of aluminium nitride: theory and experiment,” Appl. Phys. Lett. 63, 1182 (1993).
[CrossRef]

Suski, T.

P. Perlin, I. Gorczyca, S. Porowski, T. Suski, N. E. Christensen, and A. Polian, “III-V semiconducting nitrides: Physical properties under pressure,” Jpn. J. Appl. Phys., Part 1 32, 334 (1993).
[CrossRef]

Svitasheva, S. N.

V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, S. N. Svitasheva, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “AlN growth on sapphire substrate by ammonia MBE,” J. Cryst. Growth 300, 145 (2007).
[CrossRef]

Tronc, P.

P. Tronc, K. S. Zhuravlev, V. G. Mansurov, G. F. Karavaev, S. N. Grinyaev, I. Milosevic, and M. Damnjanovic, “Optical properties of photodetectors based on wurtzite quantum dot arrays,” Phys. Rev. B 77, 165328 (2008).
[CrossRef]

A. Yu. Nikitin, V. G. Mansurov, Yu. G. Galitsyn, K. S. Zhuravlev, and P. Tronc, “Exponential growth of the density of GaN and AlN nuclei under conditions of ammonium molecular-beam epitaxy,” in Abstracts of Reports of the Sixth All-Russia Conference on Nitrides of Gallium, Indium, and Aluminum--Structures and Devices, St. Petersburg, 2008, pp. 49-50.

Vennegues, Ph.

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K. S. Zhuravlev, and Ph. Vennegues, “Investigation of growth mechanisms of GaN quantum dots on (0001) AlN surface by ammonia MBE,” Phys. Status Solidi C 3, 1548 (2006).
[CrossRef]

Wickenden, D. K.

W. R. L. Lambrecht, B. Segall, J. Rife, W. R. Hunter, and D. K. Wickenden, “UV reflectivity of GaN: Theory and experiment,” Phys. Rev. B 51, 13516 (1995).
[CrossRef]

Widmann, F.

F. Widmann, J. Simon, N. T. Pelekanos, B. Daudin, G. Feuillet, J. L. Rouvière, and G. Fishman, “Giant piezoelectric effect in GaN self-assembled quantum dots,” Microelectron. J. 30, 353 (1999).
[CrossRef]

Xu, Y. N.

S. Loughin, R. H. French, W. Y. Ching, Y. N. Xu, and G. A. Slack, “Electronic structure of aluminium nitride: theory and experiment,” Appl. Phys. Lett. 63, 1182 (1993).
[CrossRef]

Yeo, Y. C.

Y. C. Yeo, T. C. Chong, M. F. Li, and W. J. Fan, “Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1−xN quantum-well lasers,” IEEE J. Quantum Electron. 34, No. 3, 526 (1998).
[CrossRef]

Y. C. Yeo, T. C. Chong, and M. F. Li, “Electronic band structures and effective-mass parameters of wurtzite GaN and InN,” J. Appl. Phys. 83, 1429 (1998).
[CrossRef]

Yu. Nikitin, A.

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, E. A. Kolosovsky, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “Continuous order-disorder phase transition (2×2)-(1×1) on the (0001) AlN surface,” Phys. Status Solidi C 4, 2498 (2007).
[CrossRef]

V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, S. N. Svitasheva, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “AlN growth on sapphire substrate by ammonia MBE,” J. Cryst. Growth 300, 145 (2007).
[CrossRef]

Zhuravlev, K. S.

P. Tronc, K. S. Zhuravlev, V. G. Mansurov, G. F. Karavaev, S. N. Grinyaev, I. Milosevic, and M. Damnjanovic, “Optical properties of photodetectors based on wurtzite quantum dot arrays,” Phys. Rev. B 77, 165328 (2008).
[CrossRef]

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, E. A. Kolosovsky, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “Continuous order-disorder phase transition (2×2)-(1×1) on the (0001) AlN surface,” Phys. Status Solidi C 4, 2498 (2007).
[CrossRef]

V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, S. N. Svitasheva, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “AlN growth on sapphire substrate by ammonia MBE,” J. Cryst. Growth 300, 145 (2007).
[CrossRef]

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K. S. Zhuravlev, and Ph. Vennegues, “Investigation of growth mechanisms of GaN quantum dots on (0001) AlN surface by ammonia MBE,” Phys. Status Solidi C 3, 1548 (2006).
[CrossRef]

A. Yu. Nikitin, V. G. Mansurov, Yu. G. Galitsyn, K. S. Zhuravlev, and P. Tronc, “Exponential growth of the density of GaN and AlN nuclei under conditions of ammonium molecular-beam epitaxy,” in Abstracts of Reports of the Sixth All-Russia Conference on Nitrides of Gallium, Indium, and Aluminum--Structures and Devices, St. Petersburg, 2008, pp. 49-50.

V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, and K. S. Zhuravlev, “Study of the surface morphology of AlGaN during MBE growth by the method of fast-electron diffraction,” in Abstracts of Reports of the Sixth All-Russia Conference on Nitrides of Gallium, Indium, and Aluminum--Structures and Devices, St. Petersburg, 2008, pp. 37-38.

Appl. Phys. Lett. (2)

P. B. Perry and R. F. Rutz, “The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process,” Appl. Phys. Lett. 33, 319 (1978).
[CrossRef]

S. Loughin, R. H. French, W. Y. Ching, Y. N. Xu, and G. A. Slack, “Electronic structure of aluminium nitride: theory and experiment,” Appl. Phys. Lett. 63, 1182 (1993).
[CrossRef]

IEEE J. Quantum Electron. (1)

Y. C. Yeo, T. C. Chong, M. F. Li, and W. J. Fan, “Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1−xN quantum-well lasers,” IEEE J. Quantum Electron. 34, No. 3, 526 (1998).
[CrossRef]

Izv. Vyssh. Uchebn. Zaved. Fiz. (1)

S. N. Grinyaev and V. V. Lopatin, “Electronic structure of graphitelike and rhombohedral boron nitride,” Izv. Vyssh. Uchebn. Zaved. Fiz. 35, No. 227 (1992).

J. Appl. Phys. (1)

Y. C. Yeo, T. C. Chong, and M. F. Li, “Electronic band structures and effective-mass parameters of wurtzite GaN and InN,” J. Appl. Phys. 83, 1429 (1998).
[CrossRef]

J. Cryst. Growth (1)

V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, S. N. Svitasheva, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “AlN growth on sapphire substrate by ammonia MBE,” J. Cryst. Growth 300, 145 (2007).
[CrossRef]

Jpn. J. Appl. Phys., Part 1 (1)

P. Perlin, I. Gorczyca, S. Porowski, T. Suski, N. E. Christensen, and A. Polian, “III-V semiconducting nitrides: Physical properties under pressure,” Jpn. J. Appl. Phys., Part 1 32, 334 (1993).
[CrossRef]

Microelectron. J. (1)

F. Widmann, J. Simon, N. T. Pelekanos, B. Daudin, G. Feuillet, J. L. Rouvière, and G. Fishman, “Giant piezoelectric effect in GaN self-assembled quantum dots,” Microelectron. J. 30, 353 (1999).
[CrossRef]

Phys. Rev. B (5)

P. Tronc, K. S. Zhuravlev, V. G. Mansurov, G. F. Karavaev, S. N. Grinyaev, I. Milosevic, and M. Damnjanovic, “Optical properties of photodetectors based on wurtzite quantum dot arrays,” Phys. Rev. B 77, 165328 (2008).
[CrossRef]

W. R. L. Lambrecht, B. Segall, J. Rife, W. R. Hunter, and D. K. Wickenden, “UV reflectivity of GaN: Theory and experiment,” Phys. Rev. B 51, 13516 (1995).
[CrossRef]

A. D. Andreev and E. P. O'Reilly, “Theory of the electronic structure of GaN/AlN hexagonal quantum dots,” Phys. Rev. B 62, 15851 (2000).
[CrossRef]

A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirley, and S. G. Louie, “Quasi-particle band structure of AlN and GaN,” Phys. Rev. B 48, 11810 (1993).
[CrossRef]

D. Fritsch, H. Schmidt, and M. Grundmann, “Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN,” Phys. Rev. B 67, 235205 (2003).
[CrossRef]

Phys. Status Solidi C (2)

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, E. A. Kolosovsky, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “Continuous order-disorder phase transition (2×2)-(1×1) on the (0001) AlN surface,” Phys. Status Solidi C 4, 2498 (2007).
[CrossRef]

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K. S. Zhuravlev, and Ph. Vennegues, “Investigation of growth mechanisms of GaN quantum dots on (0001) AlN surface by ammonia MBE,” Phys. Status Solidi C 3, 1548 (2006).
[CrossRef]

Other (2)

V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, and K. S. Zhuravlev, “Study of the surface morphology of AlGaN during MBE growth by the method of fast-electron diffraction,” in Abstracts of Reports of the Sixth All-Russia Conference on Nitrides of Gallium, Indium, and Aluminum--Structures and Devices, St. Petersburg, 2008, pp. 37-38.

A. Yu. Nikitin, V. G. Mansurov, Yu. G. Galitsyn, K. S. Zhuravlev, and P. Tronc, “Exponential growth of the density of GaN and AlN nuclei under conditions of ammonium molecular-beam epitaxy,” in Abstracts of Reports of the Sixth All-Russia Conference on Nitrides of Gallium, Indium, and Aluminum--Structures and Devices, St. Petersburg, 2008, pp. 49-50.

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.