Abstract

This paper presents the results of photoluminescence (PL) studies of submicron epitaxial n^+-n-i structures of GaAs. A mathematical model of the PL of submicron epitaxial III-V structures is proposed that makes it possible to determine the theoretical dependences of the PL intensity on the surface recombination rate, the mobility of the minority nonequilibrium charge carriers, the absorption and self-absorption coefficients, the magnitude and sign of the built-in electrostatic potential between the n^+ and n layers, and also the thicknesses of the epitaxial layers. It is pointed out that there is good agreement of the experimental and theoretical results. © 2005 Optical Society of America

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