Abstract

This paper presents the results of experimental studies of the optical constants and growth rate of SiO2 films fabricated by the magnetron sputtering of a Si target in an Ar:O2 medium by ultrasonic-frequency current. The resulting SiO2 films are similar in optical parameters to SiO2 films fabricated by ion-assisted electron-beam evaporation. © 2004 Optical Society of America

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