Abstract

This paper discusses the strong exciton-photon coupling regime in a planar dielectric SiO2/ZrO2 microcavity containing a half-wave defect with an active layer in the form of a nanometer film of J aggregates of pseudoisocyanine. The reflectance spectrum of the microcavity at room temperature and at an inclination of 6° includes two polariton peaks with a vacuum Rabi splitting of 82.5 meV. The measured splitting is an order of magnitude greater than the value recorded earlier for semiconductor microcavities containing quantum wells based on GaAs/GaAlAs and is once and a half as large as the splitting for microcavities at liquid-helium temperature and containing J aggregates of pseudoisocyanine. © 2004 Optical Society of America

PDF Article

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription