Abstract
No abstract available.
PDF ArticleMore Like This
Structural modification of transparent materials with band gap by laser radiation at the absorption edge
A. Grigorev
Appl. Opt. 58(32) 8816-8823 (2019)
Optical absorption spectra as a useful tool to find parameters of deep impurity centers in semiconductors
Viktor P. Makhniy, Paul P. Horley, Oksana V. Kinzerskaya, and Elena V. Stets
Appl. Opt. 53(10) B8-B11 (2014)
Infrared absorption cross section of arsenic in silicon in the impurity band region of concentration
Jon Geist
Appl. Opt. 28(6) 1193-1199 (1989)