Abstract

Tb<sub>3</sub>Al<sub>5</sub>O<sub>3</sub>12:Ce (TAG:Ce) thin films were successfully deposited by a pulsed laser ablation method on a quartz substrate, and low-temperature post-annealing effects on luminescent properties were investigated in detail. TAG:Ce thin films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy. The as-deposited films were amorphous, and post-annealing above 700°C was required for crystallization. The post-annealed TAG:Ce thin films showed strong and broad emission bands around 542 nm and excitations at 451 nm, which all corresponded to transitions between the <i>4f</i> ground level to the <i>5d</i><sup>1</sup> excited levels of Ce ion.

© 2012 Optical Society of Korea

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