Abstract
We characterize and analyze silicon avalanche photodetectors (APDs)
fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology.
Current characteristics, responsivity, avalanche gain, and photodetection bandwidth
of CMOS-APDs based on two types of PN junctions, N-well/P-substrate and
$P^+$/N-well junctions, are compared and
analyzed. It is demonstrated that the CMOS-APD using the
$P^+$/N-well junction has higher responsivity
as well as higher photodetection bandwidth than N-well/P-substrate. In addition, the
important factors influencing CMOS-APD performance are clarified from this
investigation.
© 2011 Optical Society of Korea
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