Abstract

The wide-band spiral inductor to be monolithically integrated on the AlN substrate as a choking inductor for a compact 10 Gb/s optical transmitter applications is investigated. In order to reduce the parasitic capacitance limiting the choking bandwidth, the AlN substrate is partially etched away, which is analyzed by using an equivalent circuit model. The measured <TEX>$S_{21}$</TEX> transmission response of the fabricated inductor is suppressed as low as -10 dB in the frequency range of 5 to 16 GHz.

© 2008 Optical Society of Korea

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