Abstract

The relative intensity noise (RIN) characteristics in 405 nm blue laser diodes grown on wurtzite AlGaInN multiple quantum well structures were investigated using the rate equations with the quantum Langevin noise model. The device parameters were extracted from the optical gain properties of the MQW active region using the self-consistent numerical method developed for calculating the multiband Hamiltonian in the strained wurtzite crystal. These methods have been applied to laser diodes for various conditions including the external feedback and the high frequency current injection.

© 2008 Optical Society of Korea

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  1. G. R. Ray, A. T. Ryan, and G. P. Agrawal, “Control of optical-feedback-induced laser intensity noise in optical data recording,” Optical Engineering, 32, 739-45, 1993
    [CrossRef]
  2. W. W. Chow, S. W. Koch, and M. Sargent III, Semiconductor Laser Physics, Springer-Verlag, Berlin, 1994
  3. J. C. Yi, and J. Y. Kim, “Investigation of External Feedback Effects on Relative Intensity Noise Characteristics of 405 nm InAlGaN Laser Diodes,” Optical Data Storage, 91-93, 2006
    [CrossRef]
  4. J. C. Yi and N. Dagli, “Finite-element analysis of valence band structure and optical properties of quantum-wire arrays on vicinal substrates,” IEEE J. Quantum Electronics, 31, pp. 208-18, 1995
    [CrossRef]
  5. J. Piprek, Semiconductor Optoelectronic Devices, Academic Press, San Diego, pp. 32-48, 2003
  6. S. Nagahama, T. Yamamoto, M. Sano, and T. Mukai, “Blue-Violet Nitride Laser,”Phys. Stat. Sol. (c) 194, no. 2, 423-427, 2002
    [CrossRef]
  7. S. J. Lee, “Differences in Design Considerations between InGaN and Conventional High-Brightness Light-Emitting Diodes,” Journal of the Optical Society of Korea, vol. 2, no. 1, pp. 13-21, 1998
  8. P. Gallion, F. Jeremier, and J. L. Vey, “Classical optical corpuscular theory of semiconductor laser intensity squeezedlight generation,” Optical and Quantum Electronics, 29, 65-70, 1997
    [CrossRef]
  9. G. P. Agrawal and N. K. Dutta, Long-wavelength Semiconductor Lasers, Van Nostrand Reinhold, NY, 1987
  10. E. C. Gage and S. Beckens, “Effects of high frequency injection and optical feedback on semiconductor laser performance,” SPIE 1316, Optical Data Storage, 199-204, 1990
    [CrossRef]
  11. Y. Huang, K. Komori, and S. Arai, “Reduction of noise figure in semiconductor laser amplifiers with <TEX>$Ga_{1-x}In_{x}As$</TEX>/GaInAsP/InP strained quantum well structures,” IEEE J. Quantum Electron., 29, pp. 2950-6, 1993
    [CrossRef]

2006 (1)

J. C. Yi, and J. Y. Kim, “Investigation of External Feedback Effects on Relative Intensity Noise Characteristics of 405 nm InAlGaN Laser Diodes,” Optical Data Storage, 91-93, 2006
[CrossRef]

2003 (1)

J. Piprek, Semiconductor Optoelectronic Devices, Academic Press, San Diego, pp. 32-48, 2003

2002 (1)

S. Nagahama, T. Yamamoto, M. Sano, and T. Mukai, “Blue-Violet Nitride Laser,”Phys. Stat. Sol. (c) 194, no. 2, 423-427, 2002
[CrossRef]

1998 (1)

S. J. Lee, “Differences in Design Considerations between InGaN and Conventional High-Brightness Light-Emitting Diodes,” Journal of the Optical Society of Korea, vol. 2, no. 1, pp. 13-21, 1998

1997 (1)

P. Gallion, F. Jeremier, and J. L. Vey, “Classical optical corpuscular theory of semiconductor laser intensity squeezedlight generation,” Optical and Quantum Electronics, 29, 65-70, 1997
[CrossRef]

1995 (1)

J. C. Yi and N. Dagli, “Finite-element analysis of valence band structure and optical properties of quantum-wire arrays on vicinal substrates,” IEEE J. Quantum Electronics, 31, pp. 208-18, 1995
[CrossRef]

1994 (1)

W. W. Chow, S. W. Koch, and M. Sargent III, Semiconductor Laser Physics, Springer-Verlag, Berlin, 1994

1993 (2)

G. R. Ray, A. T. Ryan, and G. P. Agrawal, “Control of optical-feedback-induced laser intensity noise in optical data recording,” Optical Engineering, 32, 739-45, 1993
[CrossRef]

Y. Huang, K. Komori, and S. Arai, “Reduction of noise figure in semiconductor laser amplifiers with <TEX>$Ga_{1-x}In_{x}As$</TEX>/GaInAsP/InP strained quantum well structures,” IEEE J. Quantum Electron., 29, pp. 2950-6, 1993
[CrossRef]

1990 (1)

E. C. Gage and S. Beckens, “Effects of high frequency injection and optical feedback on semiconductor laser performance,” SPIE 1316, Optical Data Storage, 199-204, 1990
[CrossRef]

1987 (1)

G. P. Agrawal and N. K. Dutta, Long-wavelength Semiconductor Lasers, Van Nostrand Reinhold, NY, 1987

Journal of the Optical Society of Korea (1)

S. J. Lee, “Differences in Design Considerations between InGaN and Conventional High-Brightness Light-Emitting Diodes,” Journal of the Optical Society of Korea, vol. 2, no. 1, pp. 13-21, 1998

Optical and Quantum Electronics (1)

P. Gallion, F. Jeremier, and J. L. Vey, “Classical optical corpuscular theory of semiconductor laser intensity squeezedlight generation,” Optical and Quantum Electronics, 29, 65-70, 1997
[CrossRef]

Optical Data Storage Topical Meeting, 2006 (1)

J. C. Yi, and J. Y. Kim, “Investigation of External Feedback Effects on Relative Intensity Noise Characteristics of 405 nm InAlGaN Laser Diodes,” Optical Data Storage, 91-93, 2006
[CrossRef]

Optical Engineering (1)

G. R. Ray, A. T. Ryan, and G. P. Agrawal, “Control of optical-feedback-induced laser intensity noise in optical data recording,” Optical Engineering, 32, 739-45, 1993
[CrossRef]

physica status solidi (a) (1)

S. Nagahama, T. Yamamoto, M. Sano, and T. Mukai, “Blue-Violet Nitride Laser,”Phys. Stat. Sol. (c) 194, no. 2, 423-427, 2002
[CrossRef]

Proceedings of SPIE (1)

E. C. Gage and S. Beckens, “Effects of high frequency injection and optical feedback on semiconductor laser performance,” SPIE 1316, Optical Data Storage, 199-204, 1990
[CrossRef]

Quantum Electronics, IEEE Journal of (2)

Y. Huang, K. Komori, and S. Arai, “Reduction of noise figure in semiconductor laser amplifiers with <TEX>$Ga_{1-x}In_{x}As$</TEX>/GaInAsP/InP strained quantum well structures,” IEEE J. Quantum Electron., 29, pp. 2950-6, 1993
[CrossRef]

J. C. Yi and N. Dagli, “Finite-element analysis of valence band structure and optical properties of quantum-wire arrays on vicinal substrates,” IEEE J. Quantum Electronics, 31, pp. 208-18, 1995
[CrossRef]

Other (3)

J. Piprek, Semiconductor Optoelectronic Devices, Academic Press, San Diego, pp. 32-48, 2003

W. W. Chow, S. W. Koch, and M. Sargent III, Semiconductor Laser Physics, Springer-Verlag, Berlin, 1994

G. P. Agrawal and N. K. Dutta, Long-wavelength Semiconductor Lasers, Van Nostrand Reinhold, NY, 1987

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