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© 2006 Optical Society of Korea
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J. C. Yi and J. Y. Kim, "Investigation of External Feedback Effects on Relative Intensity Noise Characteristics of 405 nm InAlGaN Laser Diodes", Optical Data Storage, 91-93, 2006
[Crossref]
J. Piprek, Semiconductor Optoelectronic Devices, Academic Press, San Diego, pp. 32-48, 2003
S. Nagahama, T. Yamamoto, M. Sano, and T. Mukai, "Blue-Violet Nitride Laser," Phys. Stat. Sol. (A), vol. 194, no. 2, 423-427, 2002
[Crossref]
J. Piprek and S. Nakamura, "Physics of high-power InGaN/GaN lasers," IEE Proc.-Optoelectron., 149, no 4, pp. 145-151, 2002
[Crossref]
S. J. Lee, "Differences in Design Considerations between InGaN and Conventional High-Brightness Light-Emitting Diodes," Journal of the Optical Society of Korea, vol. 2, no. 1, pp. 13-21, 1998
[Crossref]
P. Gallion, F. Jeremier, and J. L. Vey, "Classical optical corpuscular theory of semiconductor laser intensity squeezed-light generation," Optical and Quantum Electronics, vol. 29, 65-70, 1997
[Crossref]
J. C. Yi and N. Dagli, "Finite-element analysis of valence band structure and optical properties of quantum-wire arrays on vicinal substrates," IEEE J. Quantum Electronics, vol. 31, pp. 208-18, 1995
[Crossref]
W. W. Chow, S. W. Koch, and M. Sargent III, Semiconductor Laser Physics, Springer-Verlag, Berlin, 1994
G. R. Ray, A. T. Ryan, and G. P. Agrawal, "Control of optical-feedback-induced laser intensity noise in optical data recording," Optical Engineering, vol. 32, 739-45, 1993
[Crossref]
E. C. Gage and S. Beckens, "Effects of high frequency injection and optical feedback on semiconductor laser performance," Proc. SPIE, vol. 1316, Optical Data Storage, 199-204, 1990
[Crossref]
G. P. Agrawal and N. K. Dutta, Long-wavelength Semiconductor Lasers, Van Nostrand Reinhold, NY, 1987
J. Piprek and S. Nakamura, "Physics of high-power InGaN/GaN lasers," IEE Proc.-Optoelectron., 149, no 4, pp. 145-151, 2002
[Crossref]
J. C. Yi and N. Dagli, "Finite-element analysis of valence band structure and optical properties of quantum-wire arrays on vicinal substrates," IEEE J. Quantum Electronics, vol. 31, pp. 208-18, 1995
[Crossref]
S. J. Lee, "Differences in Design Considerations between InGaN and Conventional High-Brightness Light-Emitting Diodes," Journal of the Optical Society of Korea, vol. 2, no. 1, pp. 13-21, 1998
[Crossref]
P. Gallion, F. Jeremier, and J. L. Vey, "Classical optical corpuscular theory of semiconductor laser intensity squeezed-light generation," Optical and Quantum Electronics, vol. 29, 65-70, 1997
[Crossref]
J. C. Yi and J. Y. Kim, "Investigation of External Feedback Effects on Relative Intensity Noise Characteristics of 405 nm InAlGaN Laser Diodes", Optical Data Storage, 91-93, 2006
[Crossref]
G. R. Ray, A. T. Ryan, and G. P. Agrawal, "Control of optical-feedback-induced laser intensity noise in optical data recording," Optical Engineering, vol. 32, 739-45, 1993
[Crossref]
S. Nagahama, T. Yamamoto, M. Sano, and T. Mukai, "Blue-Violet Nitride Laser," Phys. Stat. Sol. (A), vol. 194, no. 2, 423-427, 2002
[Crossref]
E. C. Gage and S. Beckens, "Effects of high frequency injection and optical feedback on semiconductor laser performance," Proc. SPIE, vol. 1316, Optical Data Storage, 199-204, 1990
[Crossref]
G. P. Agrawal and N. K. Dutta, Long-wavelength Semiconductor Lasers, Van Nostrand Reinhold, NY, 1987
W. W. Chow, S. W. Koch, and M. Sargent III, Semiconductor Laser Physics, Springer-Verlag, Berlin, 1994
J. Piprek, Semiconductor Optoelectronic Devices, Academic Press, San Diego, pp. 32-48, 2003
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