Abstract

The external feedback effect on the relative intensity noise (RIN) characteristics of blue InAlGaN laser diode has been analyzed taking into account the spontaneous emission noise and the injection current for the high frequency modulation. A Langevin diffusion model was exploited to characterize its relative intensity noise. The simulation parameters were quantitatively evaluated from the optical gain properties of the InAlGaN multiple quantum well active regions by using the multiband Hamiltonian for the strained wurtzite crystals. The extracted parameters were then applied to the rate equations taking into account the external feedback and the high frequency modulation current. The RIN characteristics were investigated to optimize the low frequency laser diode noise characteristics.

© 2006 Optical Society of Korea

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    [Crossref]
  2. J. C. Yi and J. Y. Kim, "Investigation of External Feedback Effects on Relative Intensity Noise Characteristics of 405 nm InAlGaN Laser Diodes", Optical Data Storage, 91-93, 2006
    [Crossref]
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    [Crossref]
  5. J. Piprek, Semiconductor Optoelectronic Devices, Academic Press, San Diego, pp. 32-48, 2003
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    [Crossref]
  7. J. Piprek and S. Nakamura, "Physics of high-power InGaN/GaN lasers," IEE Proc.-Optoelectron., 149, no 4, pp. 145-151, 2002
    [Crossref]
  8. P. Gallion, F. Jeremier, and J. L. Vey, "Classical optical corpuscular theory of semiconductor laser intensity squeezed-light generation," Optical and Quantum Electronics, vol. 29, 65-70, 1997
    [Crossref]
  9. G. P. Agrawal and N. K. Dutta, Long-wavelength Semiconductor Lasers, Van Nostrand Reinhold, NY, 1987
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    [Crossref]
  11. S. J. Lee, "Differences in Design Considerations between InGaN and Conventional High-Brightness Light-Emitting Diodes," Journal of the Optical Society of Korea, vol. 2, no. 1, pp. 13-21, 1998
    [Crossref]

2006 (1)

J. C. Yi and J. Y. Kim, "Investigation of External Feedback Effects on Relative Intensity Noise Characteristics of 405 nm InAlGaN Laser Diodes", Optical Data Storage, 91-93, 2006
[Crossref]

2003 (1)

J. Piprek, Semiconductor Optoelectronic Devices, Academic Press, San Diego, pp. 32-48, 2003

2002 (2)

S. Nagahama, T. Yamamoto, M. Sano, and T. Mukai, "Blue-Violet Nitride Laser," Phys. Stat. Sol. (A), vol. 194, no. 2, 423-427, 2002
[Crossref]

J. Piprek and S. Nakamura, "Physics of high-power InGaN/GaN lasers," IEE Proc.-Optoelectron., 149, no 4, pp. 145-151, 2002
[Crossref]

1998 (1)

S. J. Lee, "Differences in Design Considerations between InGaN and Conventional High-Brightness Light-Emitting Diodes," Journal of the Optical Society of Korea, vol. 2, no. 1, pp. 13-21, 1998
[Crossref]

1997 (1)

P. Gallion, F. Jeremier, and J. L. Vey, "Classical optical corpuscular theory of semiconductor laser intensity squeezed-light generation," Optical and Quantum Electronics, vol. 29, 65-70, 1997
[Crossref]

1995 (1)

J. C. Yi and N. Dagli, "Finite-element analysis of valence band structure and optical properties of quantum-wire arrays on vicinal substrates," IEEE J. Quantum Electronics, vol. 31, pp. 208-18, 1995
[Crossref]

1994 (1)

W. W. Chow, S. W. Koch, and M. Sargent III, Semiconductor Laser Physics, Springer-Verlag, Berlin, 1994

1993 (1)

G. R. Ray, A. T. Ryan, and G. P. Agrawal, "Control of optical-feedback-induced laser intensity noise in optical data recording," Optical Engineering, vol. 32, 739-45, 1993
[Crossref]

1990 (1)

E. C. Gage and S. Beckens, "Effects of high frequency injection and optical feedback on semiconductor laser performance," Proc. SPIE, vol. 1316, Optical Data Storage, 199-204, 1990
[Crossref]

1987 (1)

G. P. Agrawal and N. K. Dutta, Long-wavelength Semiconductor Lasers, Van Nostrand Reinhold, NY, 1987

IEE Proc., Optoelectron. (1)

J. Piprek and S. Nakamura, "Physics of high-power InGaN/GaN lasers," IEE Proc.-Optoelectron., 149, no 4, pp. 145-151, 2002
[Crossref]

IEEE Journal of Quantum Electronics (1)

J. C. Yi and N. Dagli, "Finite-element analysis of valence band structure and optical properties of quantum-wire arrays on vicinal substrates," IEEE J. Quantum Electronics, vol. 31, pp. 208-18, 1995
[Crossref]

Journal of the Optical Society of Korea (1)

S. J. Lee, "Differences in Design Considerations between InGaN and Conventional High-Brightness Light-Emitting Diodes," Journal of the Optical Society of Korea, vol. 2, no. 1, pp. 13-21, 1998
[Crossref]

Optical and Quantum Electronics (1)

P. Gallion, F. Jeremier, and J. L. Vey, "Classical optical corpuscular theory of semiconductor laser intensity squeezed-light generation," Optical and Quantum Electronics, vol. 29, 65-70, 1997
[Crossref]

Optical Data Storage Topical Meeting, 2006 (1)

J. C. Yi and J. Y. Kim, "Investigation of External Feedback Effects on Relative Intensity Noise Characteristics of 405 nm InAlGaN Laser Diodes", Optical Data Storage, 91-93, 2006
[Crossref]

Optical Engineering (1)

G. R. Ray, A. T. Ryan, and G. P. Agrawal, "Control of optical-feedback-induced laser intensity noise in optical data recording," Optical Engineering, vol. 32, 739-45, 1993
[Crossref]

physica status solidi (a) (1)

S. Nagahama, T. Yamamoto, M. Sano, and T. Mukai, "Blue-Violet Nitride Laser," Phys. Stat. Sol. (A), vol. 194, no. 2, 423-427, 2002
[Crossref]

Proc. SPIE, Optical Data Storage (1)

E. C. Gage and S. Beckens, "Effects of high frequency injection and optical feedback on semiconductor laser performance," Proc. SPIE, vol. 1316, Optical Data Storage, 199-204, 1990
[Crossref]

Other (3)

G. P. Agrawal and N. K. Dutta, Long-wavelength Semiconductor Lasers, Van Nostrand Reinhold, NY, 1987

W. W. Chow, S. W. Koch, and M. Sargent III, Semiconductor Laser Physics, Springer-Verlag, Berlin, 1994

J. Piprek, Semiconductor Optoelectronic Devices, Academic Press, San Diego, pp. 32-48, 2003

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