Abstract

In this study, we investigated mask errors, photo errors with attenuated phase shift mask and off-axis illumination, and etch errors in dry etch conditions. We propose that total process proximity correction (TPPC), a concept merging every process step error correction, is essential in a lithography process when minimum critical dimension (CD) is smaller than the wavelength of radiation. A correction rule table was experimentally obtained applying TPPC concept. Process capability of controlling gate CD in DRAM fabrication should be improved by this method.

© 2002 Optical Society of Korea

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References

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  1. M. D. Levenson, et al., ED-29, 12 1928 (1982).
  2. K. Hashimoto, S. Usui, S. Hasebe, M. Murota, T. Nakayama, F. Matsuoka, S. Inoue, S. Kobayashi, and K. Yamamoto, Proc. of SPIE Optical Microlithography XI 3334, 224 (1998).
  3. W. Maurer, C. Dolainsky, J. Thiele, C. Friedrich, and P. Karakatsanis, Proc. of SPIE Optical Microlithography XI, 3334, 245 (1998).
  4. A. Misaka, A. Goda, S. Odanaka, S. Kobayashi, and H. Watanabe, VLSI Symposium "98, 170 (1998).
  5. E. Kawamura, T. Haruki, Y. Manabe, and I. Hanyu, Jpn. J. Appl. Phys. 34, 6547 (1995).
    [CrossRef]
  6. B. H. Nam, J. O. Park, D. J. Lee, J. H. Cheong, Y. J. Hwang, and Y. J. Song, Proceedings of SPIE, Photomask and Next-Generation Lithography Mask Technology VII, 4066, 716 (2000).

2000 (1)

B. H. Nam, J. O. Park, D. J. Lee, J. H. Cheong, Y. J. Hwang, and Y. J. Song, Proceedings of SPIE, Photomask and Next-Generation Lithography Mask Technology VII, 4066, 716 (2000).

1998 (3)

K. Hashimoto, S. Usui, S. Hasebe, M. Murota, T. Nakayama, F. Matsuoka, S. Inoue, S. Kobayashi, and K. Yamamoto, Proc. of SPIE Optical Microlithography XI 3334, 224 (1998).

W. Maurer, C. Dolainsky, J. Thiele, C. Friedrich, and P. Karakatsanis, Proc. of SPIE Optical Microlithography XI, 3334, 245 (1998).

A. Misaka, A. Goda, S. Odanaka, S. Kobayashi, and H. Watanabe, VLSI Symposium "98, 170 (1998).

1995 (1)

E. Kawamura, T. Haruki, Y. Manabe, and I. Hanyu, Jpn. J. Appl. Phys. 34, 6547 (1995).
[CrossRef]

1982 (1)

M. D. Levenson, et al., ED-29, 12 1928 (1982).

ED-29 (1)

M. D. Levenson, et al., ED-29, 12 1928 (1982).

Jpn. J. Appl. Phys. (1)

E. Kawamura, T. Haruki, Y. Manabe, and I. Hanyu, Jpn. J. Appl. Phys. 34, 6547 (1995).
[CrossRef]

Proc. of SPIE Optical Microlithography XI (2)

K. Hashimoto, S. Usui, S. Hasebe, M. Murota, T. Nakayama, F. Matsuoka, S. Inoue, S. Kobayashi, and K. Yamamoto, Proc. of SPIE Optical Microlithography XI 3334, 224 (1998).

W. Maurer, C. Dolainsky, J. Thiele, C. Friedrich, and P. Karakatsanis, Proc. of SPIE Optical Microlithography XI, 3334, 245 (1998).

Proceedings of SPIE, Photomask and Next-Generation Lithography Mask Technology VII (1)

B. H. Nam, J. O. Park, D. J. Lee, J. H. Cheong, Y. J. Hwang, and Y. J. Song, Proceedings of SPIE, Photomask and Next-Generation Lithography Mask Technology VII, 4066, 716 (2000).

VLSI Symposium '98 (1)

A. Misaka, A. Goda, S. Odanaka, S. Kobayashi, and H. Watanabe, VLSI Symposium "98, 170 (1998).

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