Abstract

We compare electroabsorption modulators (EAMs) with multiple quantum wells (MQWs) based on InGaAs(P)/InP and InGa(Al)As/InAlAs material systems. We carefully choose the quantum-well structures so that the structures based on different material systems have similar band-offset energies and excition-peak wavelengths. Assuming the same light wavelength of <TEX>$1.55{\mu}m$</TEX>, we show the transfer functions of EAMs with each quantum-well structure and calculate the escape times of photogenerated charge carriers. As the heavy-hole escape time of the quantum well based on InGaAs(P)/InP is much longer than those of photogenerated charge carriers of InGa(Al)As/InAlAs, the EAM based on the InGa(Al)As/InAlAs material seems to be more suitable for high-optical-power operation.

© 2007 Optical Society of Korea

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  1. C. H. Henry, "The origin of quantum wells and the quantum well laser," in Quantum Well Lasers, P. S. Zory, Jr., ed. (Academic Press, San Diego, 1993), pp. 8-13
  2. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, "Bandedge electro-absorption in quantum well structures: the quantum confined Stark effect," Phys. Rev. Lett., vol. 53, no. 22, pp. 2173-2177, 1984
    [CrossRef]
  3. Y. Miyazaki, H. Tada, S. Tokizaki, K. Takagi, Y. Hanamaki, T. Aoyagi, and Y. Mitsui, "+1 dBm average optical output power operation of small-chirp 40-Gbps electroabsorption modulator with tensile-strained asymmetric quantum-well absorption layer," IEEE J. Quantum Electron., vol. 39, no. 8, pp. 1009-1017, 2003
    [CrossRef]
  4. J.-R. Kim, "Study of several schemes for internal wavelength locker integrated 10 Gbps electro-absorption modulated laser modules in metro dense WDM applications," J. Opt. Soc. Korea, vol. 8, no. 2, pp. 55-58, 2004
  5. W. J. Choi and J. C. Yi, "Linearization of multiple quantum well electro-absorption modulator by using quantum well intermixing," J. Korean Phys. Soc., vol. 46, no. 6, pp. 1452-1457, 2005
  6. Y. Miyazaki, T. Yamatoya, K. Matsumoto, K. Kuramoto, K. Shibata, T. Aoyagi, and T. Ishikawa, "High-power ultralow-chirp 10-Gb/s electroabsorption modulator integrated laser with ultrashort photocarrier lifetime," IEEE J. Quantum Electron., vol. 42, no. 4, pp. 357-362, 2006
    [CrossRef]
  7. C. H. Cox, III., Analog Optical Links: Theory and Practice (Cambridge University Press, New York, 2004), pp. 74-79
  8. D. J. Moss, M. Aoki, and H. Sano, "Comparison of photoconductive response times of InGaAs/InAlAs and InGaAs/InGaAsP multi-quantum well waveguide modulator," Jpn. J. Appl. Phys., vol. 33, pp. L328-L330, 1994
    [CrossRef]
  9. B. J. Hawdon, T. Tutken, A. Hangleiter, R. W. Glew, and J. E. A. Whiteaway, "Direct comparison of InGaAs/ InGaAlAs and InGaAs/InGaAsP quantum well modulators," Electron. Lett., vol. 29, no. 8, pp. 705-707, 1993
    [CrossRef]
  10. D.-S. Shin, "Effect of a step barrier on the quantumconfined Stark effect and applications to electroabsorption modulators with high saturation optical power," J. Korean Phys. Soc., vol. 47, no. 2, pp. 364-370, 2005
  11. S. A. Pappert, Ph. D. Dissertation, Univ. of California, San Diego, 1993
  12. A. M. Fox, D. A. B. Miller, G. Livescu, J. E. Cunningham, and W. Y. Jan, "Quantum well carrier sweep out: relation to electroabsorption and exciton saturation," IEEE J. Quantum Electron., vol. 27, no. 10, pp. 2281-2295, 1991
    [CrossRef]
  13. D.-S. Shin, "Reduction in escape times of photogenerated charge carriers with asymmetric intrastep quantum wells and subsequent improvement in saturation optical intensity," Jpn. J. Appl. Phys., vol. 45, no. 12, pp. 9063-9065, 2006
    [CrossRef]

2006 (2)

Y. Miyazaki, T. Yamatoya, K. Matsumoto, K. Kuramoto, K. Shibata, T. Aoyagi, and T. Ishikawa, "High-power ultralow-chirp 10-Gb/s electroabsorption modulator integrated laser with ultrashort photocarrier lifetime," IEEE J. Quantum Electron., vol. 42, no. 4, pp. 357-362, 2006
[CrossRef]

D.-S. Shin, "Reduction in escape times of photogenerated charge carriers with asymmetric intrastep quantum wells and subsequent improvement in saturation optical intensity," Jpn. J. Appl. Phys., vol. 45, no. 12, pp. 9063-9065, 2006
[CrossRef]

2005 (2)

W. J. Choi and J. C. Yi, "Linearization of multiple quantum well electro-absorption modulator by using quantum well intermixing," J. Korean Phys. Soc., vol. 46, no. 6, pp. 1452-1457, 2005

D.-S. Shin, "Effect of a step barrier on the quantumconfined Stark effect and applications to electroabsorption modulators with high saturation optical power," J. Korean Phys. Soc., vol. 47, no. 2, pp. 364-370, 2005

2004 (2)

C. H. Cox, III., Analog Optical Links: Theory and Practice (Cambridge University Press, New York, 2004), pp. 74-79

J.-R. Kim, "Study of several schemes for internal wavelength locker integrated 10 Gbps electro-absorption modulated laser modules in metro dense WDM applications," J. Opt. Soc. Korea, vol. 8, no. 2, pp. 55-58, 2004

2003 (1)

Y. Miyazaki, H. Tada, S. Tokizaki, K. Takagi, Y. Hanamaki, T. Aoyagi, and Y. Mitsui, "+1 dBm average optical output power operation of small-chirp 40-Gbps electroabsorption modulator with tensile-strained asymmetric quantum-well absorption layer," IEEE J. Quantum Electron., vol. 39, no. 8, pp. 1009-1017, 2003
[CrossRef]

1994 (1)

D. J. Moss, M. Aoki, and H. Sano, "Comparison of photoconductive response times of InGaAs/InAlAs and InGaAs/InGaAsP multi-quantum well waveguide modulator," Jpn. J. Appl. Phys., vol. 33, pp. L328-L330, 1994
[CrossRef]

1993 (3)

B. J. Hawdon, T. Tutken, A. Hangleiter, R. W. Glew, and J. E. A. Whiteaway, "Direct comparison of InGaAs/ InGaAlAs and InGaAs/InGaAsP quantum well modulators," Electron. Lett., vol. 29, no. 8, pp. 705-707, 1993
[CrossRef]

C. H. Henry, "The origin of quantum wells and the quantum well laser," in Quantum Well Lasers, P. S. Zory, Jr., ed. (Academic Press, San Diego, 1993), pp. 8-13

S. A. Pappert, Ph. D. Dissertation, Univ. of California, San Diego, 1993

1991 (1)

A. M. Fox, D. A. B. Miller, G. Livescu, J. E. Cunningham, and W. Y. Jan, "Quantum well carrier sweep out: relation to electroabsorption and exciton saturation," IEEE J. Quantum Electron., vol. 27, no. 10, pp. 2281-2295, 1991
[CrossRef]

1984 (1)

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, "Bandedge electro-absorption in quantum well structures: the quantum confined Stark effect," Phys. Rev. Lett., vol. 53, no. 22, pp. 2173-2177, 1984
[CrossRef]

Electronics Letters (1)

B. J. Hawdon, T. Tutken, A. Hangleiter, R. W. Glew, and J. E. A. Whiteaway, "Direct comparison of InGaAs/ InGaAlAs and InGaAs/InGaAsP quantum well modulators," Electron. Lett., vol. 29, no. 8, pp. 705-707, 1993
[CrossRef]

IEEE Journal of Quantum Electronics (2)

Y. Miyazaki, H. Tada, S. Tokizaki, K. Takagi, Y. Hanamaki, T. Aoyagi, and Y. Mitsui, "+1 dBm average optical output power operation of small-chirp 40-Gbps electroabsorption modulator with tensile-strained asymmetric quantum-well absorption layer," IEEE J. Quantum Electron., vol. 39, no. 8, pp. 1009-1017, 2003
[CrossRef]

Y. Miyazaki, T. Yamatoya, K. Matsumoto, K. Kuramoto, K. Shibata, T. Aoyagi, and T. Ishikawa, "High-power ultralow-chirp 10-Gb/s electroabsorption modulator integrated laser with ultrashort photocarrier lifetime," IEEE J. Quantum Electron., vol. 42, no. 4, pp. 357-362, 2006
[CrossRef]

J. Korean Phys. Soc. (2)

W. J. Choi and J. C. Yi, "Linearization of multiple quantum well electro-absorption modulator by using quantum well intermixing," J. Korean Phys. Soc., vol. 46, no. 6, pp. 1452-1457, 2005

D.-S. Shin, "Effect of a step barrier on the quantumconfined Stark effect and applications to electroabsorption modulators with high saturation optical power," J. Korean Phys. Soc., vol. 47, no. 2, pp. 364-370, 2005

Japanese Journal of Applied Physics (2)

D.-S. Shin, "Reduction in escape times of photogenerated charge carriers with asymmetric intrastep quantum wells and subsequent improvement in saturation optical intensity," Jpn. J. Appl. Phys., vol. 45, no. 12, pp. 9063-9065, 2006
[CrossRef]

D. J. Moss, M. Aoki, and H. Sano, "Comparison of photoconductive response times of InGaAs/InAlAs and InGaAs/InGaAsP multi-quantum well waveguide modulator," Jpn. J. Appl. Phys., vol. 33, pp. L328-L330, 1994
[CrossRef]

Journal of the Optical Society of Korea (1)

J.-R. Kim, "Study of several schemes for internal wavelength locker integrated 10 Gbps electro-absorption modulated laser modules in metro dense WDM applications," J. Opt. Soc. Korea, vol. 8, no. 2, pp. 55-58, 2004

Physical Review Letters (1)

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, "Bandedge electro-absorption in quantum well structures: the quantum confined Stark effect," Phys. Rev. Lett., vol. 53, no. 22, pp. 2173-2177, 1984
[CrossRef]

Quantum Electronics, IEEE Journal of (1)

A. M. Fox, D. A. B. Miller, G. Livescu, J. E. Cunningham, and W. Y. Jan, "Quantum well carrier sweep out: relation to electroabsorption and exciton saturation," IEEE J. Quantum Electron., vol. 27, no. 10, pp. 2281-2295, 1991
[CrossRef]

Other (3)

S. A. Pappert, Ph. D. Dissertation, Univ. of California, San Diego, 1993

C. H. Henry, "The origin of quantum wells and the quantum well laser," in Quantum Well Lasers, P. S. Zory, Jr., ed. (Academic Press, San Diego, 1993), pp. 8-13

C. H. Cox, III., Analog Optical Links: Theory and Practice (Cambridge University Press, New York, 2004), pp. 74-79

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