1 September 2021, Volume 38, Issue 9, pp. 2451-2791;
Feat. pp: LMI1-LMI2; C1–C230
71 articles
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Plan-view scanning electron microscope image of an InSe/GaAs(001) film grown at 450°C at nearly stoichiometric growth conditions. See Avdienko et al., pp. 2579-2586.