Abstract

We have measured the temperature dependence of the electron mobility in a single crystal of photorefractive n-type cubic Bi12SiO20 by using a holographic time-of-flight technique. Our results show that the mobility, with a value μ = 0.24 ± 0.07 cm2/(V s) at room temperature, has a temperature dependence of the Arrhenius form, with an activation energy of 320 ± 40 meV in the experimental range 270–310 K.

© 1992 Optical Society of America

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