Abstract

A residue that is characteristic of internal scattering is extracted from the below-threshold spectra of 1.3-μm semiconductor diode lasers by fitting a smooth function to the measured gain profile. The residue is found to be correlated with the above-threshold spectral output and can be used to predict and explain the above-threshold spectral tuning characteristics of the device. This suggests that the amount of scattering in the active region is an important quantity is determining the spectral output of semiconductor diode lasers.

© 1992 Optical Society of America

Strain and scattering related spectral output of 1.3-μm InGaAsP semiconductor diode lasers

Frank H. Peters and Daniel T. Cassidy
Appl. Opt. 30(9) 1036-1041 (1991)

Model of the spectral output of gain-guided and index-guided semiconductor diode lasers

Frank H. Peters and Daniel T. Cassidy
J. Opt. Soc. Am. B 8(1) 99-105 (1991)

Side-mode gain in semiconductor lasers

Murray Sargent, Stephan W. Koch, and Weng W. Chow
J. Opt. Soc. Am. B 9(8) 1288-1298 (1992)

Spontaneous-emission factor of semiconductor diode lasers

Daniel T. Cassidy
J. Opt. Soc. Am. B 8(4) 747-752 (1991)

Stochastic mode-locking theory for external-cavity semiconductor lasers

Kevin Hsu, Carl M. Verber, and Rajarshi Roy
J. Opt. Soc. Am. B 8(2) 262-275 (1991)