Abstract

We develop a general numerical method for investigating nonlinear guided-wave phenomena in semiconductors including the effects of carrier diffusion. The macroscopic field evolution is handled by using the beam-propagation method, and the microscopic semiconductor response is obtained from a previously developed plasma theory. Coupled field–matter equations are given and solved numerically for a nonlinear directional coupler by using the material parameters of the room-temperature, bulk semiconductors GaAs and CdSe.

© 1989 Optical Society of America

Semiconductor laser array dynamics: numerical simulations on multistripe index-guided lasers

H. Adachihara, O. Hess, R. Indik, and J. V. Moloney
J. Opt. Soc. Am. B 10(3) 496-506 (1993)

Parametric amplification and modulational instabilities in dispersive nonlinear directional couplers with relaxing nonlinearity

S. Trillo, S. Wabnitz, G. I. Stegeman, and E. M. Wright
J. Opt. Soc. Am. B 6(5) 889-900 (1989)

Transient grating studies of excitonic optical nonlinearities in GaAs/AlGaAs multiple-quantum-well structures

A. Miller, R. J. Manning, P. K. Milsom, D. C. Hutchings, D. W. Crust, and K. Woodbridge
J. Opt. Soc. Am. B 6(4) 567-578 (1989)

Nonlinear transmission, degenerate four-wave mixing, photodarkening, and the effects of carrier-density-dependent nonlinearities in semiconductor-doped glasses

K. W. DeLong, A. Gabel, C. T. Seaton, and G. I. Stegeman
J. Opt. Soc. Am. B 6(7) 1306-1313 (1989)

Optical nonlinearities due to carrier transport in semiconductors

Elsa Garmire, N. M. Jokerst, A. Kost, A. Danner, and P. D. Dapkus
J. Opt. Soc. Am. B 6(4) 579-587 (1989)