Abstract

This paper reports the results on the microphotoluminescence (µPL) and photoreflectance (PR) spectroscopy studies of InSe thin film grown by molecular beam epitaxy on GaAs(001) substrate. The specific surface morphology of the InSe/GaAs(001) layer consisting of a number of randomly oriented nanoplatelets with the average thickness of 40–200 nm leads to a difference in optical properties measured on the macroscale (PR) and microscale (µPL). The highest energy peak at 1.348 eV observed in the µPL spectra at low excitation densities was attributed to the recombination of localized excitons in $\varepsilon$-InSe.

© 2021 Optical Society of America

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