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Abstract
A novel design-friendly device called the transistor-injected dual doping quantum cascade laser (${\rm TI} \text{-} {{\rm D}^2}{\rm QCL}$) with two different dopings in each stack of a homogeneous superlattice is proposed. By adjusting the base–emitter bias ${V_{\text{be}}}$ of the bipolar transistor to supply electrons in the dual doping regions, charge quasi-neutrality can be achieved to generate different optical transitions in each cascading superlattice stack. These transitions are then stacked and amplified to contribute to a broad flat gain spectrum. Model calculations of a designed ${\rm TI} \text{-} {{\rm D}^2}{\rm QCL}$ show that a broad flat gain spectrum ranging from 9.41 µm to 12.01 µm with a relative bandwidth of 0.24 can be obtained, indicating that the ${\rm TI} \text{-} {{\rm D}^2}{\rm QCL}$ with dual doping pattern may open a new pathway to the appealing applications in both mid-infrared and terahertz frequency ranges, from wideband optical generations to advanced frequency comb technologies.
© 2021 Optical Society of America
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