Abstract

The surface laser-induced damage threshold (LIDT) of ${{\rm BaGa}_4}{{\rm Se}_7}$ and ${{\rm BaGa}_2}{{\rm GeSe}_6}$ nonlinear crystals was studied at 2091 nm. Both yellow and dark yellow phases of ${{\rm BaGa}_4}{{\rm Se}_7}$ were investigated. The Ho:YAG laser generating nanosecond pulses at 2 kHz, 5 kHz, and 10 kHz was used as a radiation source. The R-on-1 procedure was applied to determine the 0% probability damage threshold. The LIDT of the dark yellow phase of ${{\rm BaGa}_4}{{\rm Se}_7}$ without cleavage planes is very close to the ${{\rm BaGa}_2}{{\rm GeSe}_6}$ LIDT and exceeds by ca. 30% the LIDT of the yellow phase of ${{\rm BaGa}_4}{{\rm Se}_7}$ at 2 and 5 kHz.

© 2020 Optical Society of America

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