Abstract

In this paper, we present an analytical solution to the Maxwell–Bloch equations of the two-level semiconductor quantum well, ${\rm GaAs/AlGaAs}$. In addition, we discuss the effects of coherent Rabi oscillations $\Omega (t)$ and the frequency of the semiconductor system $\nu (t)$ on atomic occupation probabilities, ${\rho _{11}}(t)$ and ${\rho _{22}}(t)$, population inversion, ${\rho _z}(t)$, and information entropies, $H({\sigma _x})$, $H({\sigma _y})$, and $H({\sigma _z})$. We observe clearly the emergence of long-lived quantum coherence and the decay in curves for some special cases of $\Omega (t)$ and $\nu (t)$. Also, we show that the dynamic nonlinear properties of the system can be controlled by changing the values of the coherent Rabi oscillations $\Omega (t)$ and the frequency of the semiconductor system $\nu (t)$. Due to the lack of mathematical treatment of such systems, our study promises significant advantages for a large number of nonlinear dynamic systems, opening up a wide range of applications for semiconductor quantum wells.

© 2020 Optical Society of America

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