Gain dynamics in a highly ytterbium-doped potassium double tungstate epitaxial layer

Yean-Sheng Yong; Shanmugam Aravazhi; Sergio A. Vázquez-Córdova; Jennifer L. Herek; Sonia M. García-Blanco; Markus Pollnau

doi:10.1364/JOSAB.35.002176

Journal of the Optical Society of America B
Vol. 35,
Issue 9,
pp. 2176-2185
(2018)
•https://doi.org/10.1364/JOSAB.35.002176

Gain dynamics in a highly ytterbium-doped potassium double tungstate epitaxial layer

Yean-Sheng Yong, Shanmugam Aravazhi, Sergio A. Vázquez-Córdova, Jennifer L. Herek, Sonia M. García-Blanco, and Markus Pollnau

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Yean-Sheng Yong, Shanmugam Aravazhi, Sergio A. Vázquez-Córdova, Jennifer L. Herek, Sonia M. García-Blanco, and Markus Pollnau, "Gain dynamics in a highly ytterbium-doped potassium double tungstate epitaxial layer," J. Opt. Soc. Am. B 35, 2176-2185 (2018)

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Abstract

Active media with high rare-earth concentrations are essential for small-footprint waveguide amplifiers. When operating at high population inversion, such devices are often affected by undesired energy-transfer processes and thermal effects. In this work, we study a 32-μm-thick epitaxial layer of ${KGd}_{0.43} {Yb}_{0.57} {({WO}_{4})}_{2}$ , representing an ${Yb}^{3 +}$ concentration of $\sim 3.8 \times 10^{21} {cm}^{- 3}$ , grown on an undoped $KY {({WO}_{4})}_{2}$ substrate. The pump absorption, luminescence decay, and small-signal gain are investigated under intense pumping conditions. Spectroscopic signatures of an energy-transfer process and of quenched ions, as well as thermal effects, are observed. We present a gain model which takes into account excessive heat generated due to the abovementioned experimental observations. Based on finite-element calculations, we find that the net gain is significantly reduced due to, first, a fraction of ${Yb}^{3 +}$ ions not contributing to stimulated emission, second, a reduction of population inversion owing to a parasitic energy-transfer process and, third, degradation of the effective transition cross-sections owing to device heating. Nevertheless, a signal enhancement of 8.1 dB was measured from the sample at 981 nm wavelength when pumping at 932 nm. The corresponding signal net gain of $\sim 800 dB / cm$ , which was achieved without thermal management, is promising for a waveguide amplifier operating without active cooling.

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Parameter	Value
Layer composition	${KGd}_{0.43} {Yb}_{0.57} {({WO}_{4})}_{2}$
Thickness of polished layer, $t_{layer}$	32 μm
${Yb}^{3 +}$ concentration, $N_{Yb}$	$3.8 \times 10^{21} {cm}^{- 3}$
Substrate	$KY {({WO}_{4})}_{2}$
Substrate thickness, $t_{substrate}$	$\sim 1 mm$
Substrate width, $w_{substrate}$	$\sim 10 mm$
Substrate depth, $d_{substrate}$	$\sim 10 mm$
Gaussian beam waist for pump, $w_{p}$	5 μm
Gaussian beam waist for signal, $w_{s}$	4 μm
Pump wavelength, $λ_{p}$	932 nm
Signal wavelength, $λ_{s}$	981 nm
Mean emission wavelength, $λ_{m}$	996 nm
Propagation losses, $α_{p}$ & $α_{s}$	0 dB/cm
Luminescence lifetime, $τ_{a}$	228 μs [39]
Energy-transfer parameter, $W_{ET}$	$1.3 \times 10^{- 18} {cm}^{3} s^{- 1}$
Fraction of quenched ions, $f_{q}$	0 or 0.15
Heat-transfer coefficient, $h_{T}$	$10 {Wm}^{- 2} K^{- 1}$
External temperature, $T_{ext}$	300 K

Parameter ^a (unit)	$T_{0}$ (K)	$σ$ ( $T_{0}$ ) ( $10^{- 20} {cm}^{2}$ )	$c_{1}$ ( $10^{- 3} K^{- 1}$ )	$c_{2}$ ( $10^{- 5} K^{- 2}$ )	$c_{3}$ ( $10^{- 8} K^{- 3}$ )
$σ_{abs, 932 nm}$	293.15	2.81	7.063	−3.574	4.004
$σ_{em, 932 nm}$	293.15	0.267	−7.527	3.925	−4.512
$σ_{abs, 981 nm}$	293.15	13.1	9.598	−4.933	5.672
$σ_{em, 981 nm}$	293.15	16.2	9.301	−4.775	5.482

Parameter ^a (unit)	$T_{0}$ (K)	$k (T_{0}) ({Wm}^{- 1} K^{- 1})$	$c_{1} (10^{- 3} K^{- 1})$	$c_{2} (10^{- 5} K^{- 2})$	$c_{3} (10^{- 8} K^{- 3})$
$k_{th, 1}$	298.15	3.09	1.851	−0.9055	0.9155
$k_{th, 2}$	298.15	2.55	2.298	−1.170	1.257
$k_{th, 3}$	298.15	4.00	1.402	−0.6786	0.6439

Parameter	Value
Layer composition	${KGd}_{0.43} {Yb}_{0.57} {({WO}_{4})}_{2}$
Thickness of polished layer, $t_{layer}$	32 μm
${Yb}^{3 +}$ concentration, $N_{Yb}$	$3.8 \times 10^{21} {cm}^{- 3}$
Substrate	$KY {({WO}_{4})}_{2}$
Substrate thickness, $t_{substrate}$	$\sim 1 mm$
Substrate width, $w_{substrate}$	$\sim 10 mm$
Substrate depth, $d_{substrate}$	$\sim 10 mm$
Gaussian beam waist for pump, $w_{p}$	5 μm
Gaussian beam waist for signal, $w_{s}$	4 μm
Pump wavelength, $λ_{p}$	932 nm
Signal wavelength, $λ_{s}$	981 nm
Mean emission wavelength, $λ_{m}$	996 nm
Propagation losses, $α_{p}$ & $α_{s}$	0 dB/cm
Luminescence lifetime, $τ_{a}$	228 μs [39]
Energy-transfer parameter, $W_{ET}$	$1.3 \times 10^{- 18} {cm}^{3} s^{- 1}$
Fraction of quenched ions, $f_{q}$	0 or 0.15
Heat-transfer coefficient, $h_{T}$	$10 {Wm}^{- 2} K^{- 1}$
External temperature, $T_{ext}$	300 K

Parameter ^a (unit)	$T_{0}$ (K)	$σ$ ( $T_{0}$ ) ( $10^{- 20} {cm}^{2}$ )	$c_{1}$ ( $10^{- 3} K^{- 1}$ )	$c_{2}$ ( $10^{- 5} K^{- 2}$ )	$c_{3}$ ( $10^{- 8} K^{- 3}$ )
$σ_{abs, 932 nm}$	293.15	2.81	7.063	−3.574	4.004
$σ_{em, 932 nm}$	293.15	0.267	−7.527	3.925	−4.512
$σ_{abs, 981 nm}$	293.15	13.1	9.598	−4.933	5.672
$σ_{em, 981 nm}$	293.15	16.2	9.301	−4.775	5.482

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Journal of the Optical Society of America B