Abstract

Recently, a high-speed and high-efficiency silicon photodiode (PD) was demonstrated by enabling light trapping micro/nanostructured holes. While attractive for light manipulation, these high surface-to-volume-ratio nanostructures, which are created by top-down dry etching processes, can also bring other challenges, such as creating silicon surface damage and crystalline defects. To reduce the dark current level and minimize surface recombination, successful passivation is a vital step to achieving the ultimate performance of the silicon PD based on photon-trapping structures. In this paper, we present and compare several effective silicon surface passivation schemes including plasma-enhanced chemical vapor deposited SiO2 and Si3N4, hydrofluoric acid (HF) treatment, thermal oxidation, and low ion energy dry etch. These passivation techniques can reduce the dark current by more than 4 orders of magnitude, bringing it down to the nanoampere level. Among these passivation schemes, HF treatment is relatively simple and cost effective, while other techniques may alter the light trapping characteristics of silicon PDs to some extent, thus affecting their external quantum efficiency. The passivation techniques discussed in this paper are CMOS compatible and can also be applied to other silicon photonic devices, such as photovoltaics.

© 2018 Optical Society of America

Full Article  |  PDF Article
OSA Recommended Articles
Impact of etching on the surface leakage generation in mesa-type InGaAs/InAlAs avalanche photodetectors

Yingjie Ma, Yonggang Zhang, Yi Gu, Xingyou Chen, Yanhui Shi, Wanyan Ji, Suping Xi, Ben Du, Xiaoliang Li, Hengjing Tang, Yongfu Li, and Jiaxiong Fang
Opt. Express 24(7) 7823-7834 (2016)

Ge photodetector monolithically integrated with amorphous Si waveguide on wafer-bonded Ge-on-insulator substrate

Jian Kang, Shinichi Takagi, and Mitsuru Takenaka
Opt. Express 26(23) 30546-30555 (2018)

High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform

Yiding Lin, Kwang Hong Lee, Shuyu Bao, Xin Guo, Hong Wang, Jurgen Michel, and Chuan Seng Tan
Photon. Res. 5(6) 702-709 (2017)

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Figures (6)

You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Tables (1)

You do not have subscription access to this journal. Article tables are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Equations (1)

You do not have subscription access to this journal. Equations are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Metrics

You do not have subscription access to this journal. Article level metrics are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription