Abstract

A microscopic approach is developed to compute the excitonic properties and the corresponding terahertz response for semiconductors characterized by anisotropic effective masses. The approach is illustrated for the example of germanium, where it is shown that the anisotropic electron mass in the $L$ valley leads to two distinct terahertz absorption resonances separated by 0.8 meV. Thus, terahertz absorption spectroscopy can be applied to directly observe the mass anisotropy.

© 2016 Optical Society of America

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