Abstract

Defect-induced stress has been mapped in optical-grade synthetic diamond (chemical vapor deposition grown, low nitrogen, low birefringence) using Metripol polarimetry, Mueller polarimetry, and Raman microscopy. Large circular retardance was observed in the 8 mm long 110 cut crystal with values up to 28° for some paths along the major axis. Metripol-determined values for linear birefringence magnitude and fast-axis direction in such regions have significant error. Stress-induced shifts in Raman frequency were observed up to 0.7  cm1, which we deduce result from uniaxial and biaxial stresses up to 0.86 GPa. We also elucidate the effect of stress on diamond Raman laser performance. For high cavity Q Raman lasers, the direction of the linear birefringence axis is found to be a primary factor determining the laser threshold and the input–output polarization characteristics.

© 2016 Optical Society of America

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