Abstract

We present a theoretical scheme for laser cooling with the rare-earth-doped direct band-gap semiconductors. We consider ytterbium-doped indium phosphide (Yb3+:InP), in which the cooling process is based on thermal quenching of excited ytterbium ions. The mechanism of cooling in our system consists of laser excitation of ytterbium ions followed by thermal quenching of excited ions accompanied by phonon absorption providing cooling. The band-to-band radiative recombination finalizing the cooling cycle removes energy from the system. This approach to laser cooling of solids permits an increase in the efficiency of the cooling cycle, as well as an acceleration of the cooling process.

© 2013 Optical Society of America

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