Abstract

Experimental results are presented on selection of high-order modes in broad aperture laser diode coupled with digital planar hologram (DPH). Computer-generated hologram DPH fabricated on SiO2Gex waveguide core determines the spectrum and field distribution at the laser output. The technology allows a temperature-stable spectral narrowing down to 0.6 nm and a decrease of the far-field distribution width from 6.5° to 2°. These results open a novel route for increasing the brightness and wavelength temperature stabilization of high-power laser diodes by coupling with planar photonic circuit.

© 2013 Optical Society of America

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  1. A. Jechow, V. Raab, R. Menzel, M. Cenkier, S. Stry, and J. Sacher, “1 W tunable near diffraction limited light from a broad area laser diode in an external cavity with a line width of 1.7 MHz,” Opt. Commun. 277, 161–165 (2007).
    [CrossRef]
  2. S. E. Park, T. Y. Kwon, E. Shin, and H. S. Lee, “A compact extended-cavity diode laser with a Littman configuration,” IEEE Trans. Instrum. Meas. 52, 280–283 (2003).
    [CrossRef]
  3. A. Larsson, J. Salzman, M. Mittelstein, and A. Yariv, “Lateral coherence properties of broad-area semiconductor quantum well lasers,” J. Appl. Phys. 60, 66–68 (1986).
    [CrossRef]
  4. R. J. Lang, A. G. Larsson, and J. G. Cody, “Lateral modes of broad area semiconductor lasers: theory and experiment,” IEEE J. Quantum Electron. 27, 312–320 (1991).
    [CrossRef]
  5. S. Blaaberg, P. M. Petersen, and B. Tromborg, “Structure, stability, and spectra of lateral modes of a broad-area semiconductor laser,” IEEE J. Quantum Electron. 43, 959–973 (2007).
    [CrossRef]
  6. J. R. Marciante and G. P. Agrawal, “Nonlinear mechanisms of filamentation in broad-area semiconductor lasers,” IEEE J. Quantum Electron. 32, 590–596 (1996).
    [CrossRef]
  7. P. K. L. Chan, K. P. Pipe, J. J. Plant, R. B. Swint, and P. W. Juodawlkis, “Heat transfer and thermal lensing in large-mode high-power laser diodes,” Proc. SPIE 6456, 645603(2007).
    [CrossRef]
  8. J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
    [CrossRef]
  9. R. Ostendorf, C. Schilling, G. Kaufel, R. Moritz, J. Wagner, G. Kochem, P. Friedmann, J. Gilly, and M. T. Kelemen, “High-power frequency stabilized tapered diode amplifiers at 1064 nm,” Proc. SPIE 7198, 719811 (2009).
    [CrossRef]
  10. M. Chi, O. B. Jensen, J. Holm, C. Pedersen, P. E. Andersen, G. Erbert, B. Sumpf, and P. M. Petersen, “Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier,” Opt. Express 13, 10589–10596(2005).
    [CrossRef]
  11. M. T. Kelemen, J. Weber, M. Mikulla, and G. Weimann, “High-power high-brightness tapered diode lasers and amplifiers,” Proc. SPIE 5723, 198–208 (2005).
    [CrossRef]
  12. J. Chen, X. Wu, J. Ge, A. Hermerschmidt, and H. J. Eichler, “Broad-area laser diode with 0.02 nm bandwidth and diffraction limited output due to double external cavity feedback,” Appl. Phys. Lett. 85, 524–525 (2004).
    [CrossRef]
  13. Z. Su, Q. Lou, J. Dong, J. Zhou, and R. Wei, “Beam quality improvement of laser diode array by using off-axis external cavity,” Opt. Express 15, 11776–11780 (2007).
    [CrossRef]
  14. G. J. Steckman, W. Liu, R. Platz, D. Schroeder, C. Moser, and F. Havermeyer, “Volume holographic grating wavelength stabilized laser diodes,” IEEE J. Sel. Top. Quantum Electron. 13, 672–678 (2007).
    [CrossRef]
  15. V. Svetikov, I. Ivonin, A. Koshelev, L. Velikov, Yu. Vorobiev, A. Goltsov, and V. Yankov, “Suppression of lateral modes in wide aperture laser diodes by digital planar holograms,” Proc. SPIE 7918, 79180P (2011).
    [CrossRef]
  16. A. Jechow, M. Lichtner, R. Menzel, M. Radziunas, D. Skoczowsky, and A. G. Vladimirov, “Stripe-array diode-laser in an off-axis external cavity: theory and experiment,” Opt. Express 17, 19599–19604 (2009).
    [CrossRef]
  17. P. M. Smowton, E. J. Pearce, H. C. Schneider, W. W. Chow, and M. Hopkinson, “Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers,” Appl. Phys. Lett. 81, 3251–3253 (2002).
    [CrossRef]
  18. I. Fischer, O. Hess, W. Elsäßer, and E. Göbel, “Complex spatio-temporal dynamics in the near-field of a broad-area semiconductor laser,” Europhys. Lett. 35, 579–584 (1996).
    [CrossRef]
  19. S. Babin, C. Peroz, A. Bugrov, A. Goltsov, I. Ivonin, V. Yankov, S. Dhuey, S. Cabrini, E.-B. Kley, and H. Schmidt, “Fabrication of novel digital optical spectrometer on chip,” J. Vac. Sci. Technol. B 27, 3187–3191 (2009).
    [CrossRef]
  20. C. Peroz, S. Dhuey, A. Goltsov, M. Volger, B. Harteneck, I. Ivonin, A. Bugrov, S. Cabrini, S. Babin, and V. Yankov, “Digital spectrometer-on-chip fabricated by step and repeat nanoimprint lithography on pre-spin coated films,” Microelectron. Eng. 88, 2092–2095 (2011).
    [CrossRef]

2011 (2)

V. Svetikov, I. Ivonin, A. Koshelev, L. Velikov, Yu. Vorobiev, A. Goltsov, and V. Yankov, “Suppression of lateral modes in wide aperture laser diodes by digital planar holograms,” Proc. SPIE 7918, 79180P (2011).
[CrossRef]

C. Peroz, S. Dhuey, A. Goltsov, M. Volger, B. Harteneck, I. Ivonin, A. Bugrov, S. Cabrini, S. Babin, and V. Yankov, “Digital spectrometer-on-chip fabricated by step and repeat nanoimprint lithography on pre-spin coated films,” Microelectron. Eng. 88, 2092–2095 (2011).
[CrossRef]

2009 (4)

S. Babin, C. Peroz, A. Bugrov, A. Goltsov, I. Ivonin, V. Yankov, S. Dhuey, S. Cabrini, E.-B. Kley, and H. Schmidt, “Fabrication of novel digital optical spectrometer on chip,” J. Vac. Sci. Technol. B 27, 3187–3191 (2009).
[CrossRef]

A. Jechow, M. Lichtner, R. Menzel, M. Radziunas, D. Skoczowsky, and A. G. Vladimirov, “Stripe-array diode-laser in an off-axis external cavity: theory and experiment,” Opt. Express 17, 19599–19604 (2009).
[CrossRef]

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

R. Ostendorf, C. Schilling, G. Kaufel, R. Moritz, J. Wagner, G. Kochem, P. Friedmann, J. Gilly, and M. T. Kelemen, “High-power frequency stabilized tapered diode amplifiers at 1064 nm,” Proc. SPIE 7198, 719811 (2009).
[CrossRef]

2007 (5)

A. Jechow, V. Raab, R. Menzel, M. Cenkier, S. Stry, and J. Sacher, “1 W tunable near diffraction limited light from a broad area laser diode in an external cavity with a line width of 1.7 MHz,” Opt. Commun. 277, 161–165 (2007).
[CrossRef]

S. Blaaberg, P. M. Petersen, and B. Tromborg, “Structure, stability, and spectra of lateral modes of a broad-area semiconductor laser,” IEEE J. Quantum Electron. 43, 959–973 (2007).
[CrossRef]

P. K. L. Chan, K. P. Pipe, J. J. Plant, R. B. Swint, and P. W. Juodawlkis, “Heat transfer and thermal lensing in large-mode high-power laser diodes,” Proc. SPIE 6456, 645603(2007).
[CrossRef]

Z. Su, Q. Lou, J. Dong, J. Zhou, and R. Wei, “Beam quality improvement of laser diode array by using off-axis external cavity,” Opt. Express 15, 11776–11780 (2007).
[CrossRef]

G. J. Steckman, W. Liu, R. Platz, D. Schroeder, C. Moser, and F. Havermeyer, “Volume holographic grating wavelength stabilized laser diodes,” IEEE J. Sel. Top. Quantum Electron. 13, 672–678 (2007).
[CrossRef]

2005 (2)

2004 (1)

J. Chen, X. Wu, J. Ge, A. Hermerschmidt, and H. J. Eichler, “Broad-area laser diode with 0.02 nm bandwidth and diffraction limited output due to double external cavity feedback,” Appl. Phys. Lett. 85, 524–525 (2004).
[CrossRef]

2003 (1)

S. E. Park, T. Y. Kwon, E. Shin, and H. S. Lee, “A compact extended-cavity diode laser with a Littman configuration,” IEEE Trans. Instrum. Meas. 52, 280–283 (2003).
[CrossRef]

2002 (1)

P. M. Smowton, E. J. Pearce, H. C. Schneider, W. W. Chow, and M. Hopkinson, “Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers,” Appl. Phys. Lett. 81, 3251–3253 (2002).
[CrossRef]

1996 (2)

I. Fischer, O. Hess, W. Elsäßer, and E. Göbel, “Complex spatio-temporal dynamics in the near-field of a broad-area semiconductor laser,” Europhys. Lett. 35, 579–584 (1996).
[CrossRef]

J. R. Marciante and G. P. Agrawal, “Nonlinear mechanisms of filamentation in broad-area semiconductor lasers,” IEEE J. Quantum Electron. 32, 590–596 (1996).
[CrossRef]

1991 (1)

R. J. Lang, A. G. Larsson, and J. G. Cody, “Lateral modes of broad area semiconductor lasers: theory and experiment,” IEEE J. Quantum Electron. 27, 312–320 (1991).
[CrossRef]

1986 (1)

A. Larsson, J. Salzman, M. Mittelstein, and A. Yariv, “Lateral coherence properties of broad-area semiconductor quantum well lasers,” J. Appl. Phys. 60, 66–68 (1986).
[CrossRef]

Agrawal, G. P.

J. R. Marciante and G. P. Agrawal, “Nonlinear mechanisms of filamentation in broad-area semiconductor lasers,” IEEE J. Quantum Electron. 32, 590–596 (1996).
[CrossRef]

Andersen, P. E.

Babin, S.

C. Peroz, S. Dhuey, A. Goltsov, M. Volger, B. Harteneck, I. Ivonin, A. Bugrov, S. Cabrini, S. Babin, and V. Yankov, “Digital spectrometer-on-chip fabricated by step and repeat nanoimprint lithography on pre-spin coated films,” Microelectron. Eng. 88, 2092–2095 (2011).
[CrossRef]

S. Babin, C. Peroz, A. Bugrov, A. Goltsov, I. Ivonin, V. Yankov, S. Dhuey, S. Cabrini, E.-B. Kley, and H. Schmidt, “Fabrication of novel digital optical spectrometer on chip,” J. Vac. Sci. Technol. B 27, 3187–3191 (2009).
[CrossRef]

Blaaberg, S.

S. Blaaberg, P. M. Petersen, and B. Tromborg, “Structure, stability, and spectra of lateral modes of a broad-area semiconductor laser,” IEEE J. Quantum Electron. 43, 959–973 (2007).
[CrossRef]

Bream, P.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Bugrov, A.

C. Peroz, S. Dhuey, A. Goltsov, M. Volger, B. Harteneck, I. Ivonin, A. Bugrov, S. Cabrini, S. Babin, and V. Yankov, “Digital spectrometer-on-chip fabricated by step and repeat nanoimprint lithography on pre-spin coated films,” Microelectron. Eng. 88, 2092–2095 (2011).
[CrossRef]

S. Babin, C. Peroz, A. Bugrov, A. Goltsov, I. Ivonin, V. Yankov, S. Dhuey, S. Cabrini, E.-B. Kley, and H. Schmidt, “Fabrication of novel digital optical spectrometer on chip,” J. Vac. Sci. Technol. B 27, 3187–3191 (2009).
[CrossRef]

Bull, S.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Cabrini, S.

C. Peroz, S. Dhuey, A. Goltsov, M. Volger, B. Harteneck, I. Ivonin, A. Bugrov, S. Cabrini, S. Babin, and V. Yankov, “Digital spectrometer-on-chip fabricated by step and repeat nanoimprint lithography on pre-spin coated films,” Microelectron. Eng. 88, 2092–2095 (2011).
[CrossRef]

S. Babin, C. Peroz, A. Bugrov, A. Goltsov, I. Ivonin, V. Yankov, S. Dhuey, S. Cabrini, E.-B. Kley, and H. Schmidt, “Fabrication of novel digital optical spectrometer on chip,” J. Vac. Sci. Technol. B 27, 3187–3191 (2009).
[CrossRef]

Cenkier, M.

A. Jechow, V. Raab, R. Menzel, M. Cenkier, S. Stry, and J. Sacher, “1 W tunable near diffraction limited light from a broad area laser diode in an external cavity with a line width of 1.7 MHz,” Opt. Commun. 277, 161–165 (2007).
[CrossRef]

Chan, P. K. L.

P. K. L. Chan, K. P. Pipe, J. J. Plant, R. B. Swint, and P. W. Juodawlkis, “Heat transfer and thermal lensing in large-mode high-power laser diodes,” Proc. SPIE 6456, 645603(2007).
[CrossRef]

Chen, J.

J. Chen, X. Wu, J. Ge, A. Hermerschmidt, and H. J. Eichler, “Broad-area laser diode with 0.02 nm bandwidth and diffraction limited output due to double external cavity feedback,” Appl. Phys. Lett. 85, 524–525 (2004).
[CrossRef]

Chi, M.

Chow, W. W.

P. M. Smowton, E. J. Pearce, H. C. Schneider, W. W. Chow, and M. Hopkinson, “Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers,” Appl. Phys. Lett. 81, 3251–3253 (2002).
[CrossRef]

Cody, J. G.

R. J. Lang, A. G. Larsson, and J. G. Cody, “Lateral modes of broad area semiconductor lasers: theory and experiment,” IEEE J. Quantum Electron. 27, 312–320 (1991).
[CrossRef]

Dhuey, S.

C. Peroz, S. Dhuey, A. Goltsov, M. Volger, B. Harteneck, I. Ivonin, A. Bugrov, S. Cabrini, S. Babin, and V. Yankov, “Digital spectrometer-on-chip fabricated by step and repeat nanoimprint lithography on pre-spin coated films,” Microelectron. Eng. 88, 2092–2095 (2011).
[CrossRef]

S. Babin, C. Peroz, A. Bugrov, A. Goltsov, I. Ivonin, V. Yankov, S. Dhuey, S. Cabrini, E.-B. Kley, and H. Schmidt, “Fabrication of novel digital optical spectrometer on chip,” J. Vac. Sci. Technol. B 27, 3187–3191 (2009).
[CrossRef]

Dong, J.

Eichler, H. J.

J. Chen, X. Wu, J. Ge, A. Hermerschmidt, and H. J. Eichler, “Broad-area laser diode with 0.02 nm bandwidth and diffraction limited output due to double external cavity feedback,” Appl. Phys. Lett. 85, 524–525 (2004).
[CrossRef]

Elsäßer, W.

I. Fischer, O. Hess, W. Elsäßer, and E. Göbel, “Complex spatio-temporal dynamics in the near-field of a broad-area semiconductor laser,” Europhys. Lett. 35, 579–584 (1996).
[CrossRef]

Erbert, G.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

M. Chi, O. B. Jensen, J. Holm, C. Pedersen, P. E. Andersen, G. Erbert, B. Sumpf, and P. M. Petersen, “Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier,” Opt. Express 13, 10589–10596(2005).
[CrossRef]

Fischer, I.

I. Fischer, O. Hess, W. Elsäßer, and E. Göbel, “Complex spatio-temporal dynamics in the near-field of a broad-area semiconductor laser,” Europhys. Lett. 35, 579–584 (1996).
[CrossRef]

Friedmann, P.

R. Ostendorf, C. Schilling, G. Kaufel, R. Moritz, J. Wagner, G. Kochem, P. Friedmann, J. Gilly, and M. T. Kelemen, “High-power frequency stabilized tapered diode amplifiers at 1064 nm,” Proc. SPIE 7198, 719811 (2009).
[CrossRef]

Ge, J.

J. Chen, X. Wu, J. Ge, A. Hermerschmidt, and H. J. Eichler, “Broad-area laser diode with 0.02 nm bandwidth and diffraction limited output due to double external cavity feedback,” Appl. Phys. Lett. 85, 524–525 (2004).
[CrossRef]

Georges, P.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Gilly, J.

R. Ostendorf, C. Schilling, G. Kaufel, R. Moritz, J. Wagner, G. Kochem, P. Friedmann, J. Gilly, and M. T. Kelemen, “High-power frequency stabilized tapered diode amplifiers at 1064 nm,” Proc. SPIE 7198, 719811 (2009).
[CrossRef]

Göbel, E.

I. Fischer, O. Hess, W. Elsäßer, and E. Göbel, “Complex spatio-temporal dynamics in the near-field of a broad-area semiconductor laser,” Europhys. Lett. 35, 579–584 (1996).
[CrossRef]

Goltsov, A.

V. Svetikov, I. Ivonin, A. Koshelev, L. Velikov, Yu. Vorobiev, A. Goltsov, and V. Yankov, “Suppression of lateral modes in wide aperture laser diodes by digital planar holograms,” Proc. SPIE 7918, 79180P (2011).
[CrossRef]

C. Peroz, S. Dhuey, A. Goltsov, M. Volger, B. Harteneck, I. Ivonin, A. Bugrov, S. Cabrini, S. Babin, and V. Yankov, “Digital spectrometer-on-chip fabricated by step and repeat nanoimprint lithography on pre-spin coated films,” Microelectron. Eng. 88, 2092–2095 (2011).
[CrossRef]

S. Babin, C. Peroz, A. Bugrov, A. Goltsov, I. Ivonin, V. Yankov, S. Dhuey, S. Cabrini, E.-B. Kley, and H. Schmidt, “Fabrication of novel digital optical spectrometer on chip,” J. Vac. Sci. Technol. B 27, 3187–3191 (2009).
[CrossRef]

Harteneck, B.

C. Peroz, S. Dhuey, A. Goltsov, M. Volger, B. Harteneck, I. Ivonin, A. Bugrov, S. Cabrini, S. Babin, and V. Yankov, “Digital spectrometer-on-chip fabricated by step and repeat nanoimprint lithography on pre-spin coated films,” Microelectron. Eng. 88, 2092–2095 (2011).
[CrossRef]

Hasler, K.-H.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Havermeyer, F.

G. J. Steckman, W. Liu, R. Platz, D. Schroeder, C. Moser, and F. Havermeyer, “Volume holographic grating wavelength stabilized laser diodes,” IEEE J. Sel. Top. Quantum Electron. 13, 672–678 (2007).
[CrossRef]

Hermerschmidt, A.

J. Chen, X. Wu, J. Ge, A. Hermerschmidt, and H. J. Eichler, “Broad-area laser diode with 0.02 nm bandwidth and diffraction limited output due to double external cavity feedback,” Appl. Phys. Lett. 85, 524–525 (2004).
[CrossRef]

Hess, O.

I. Fischer, O. Hess, W. Elsäßer, and E. Göbel, “Complex spatio-temporal dynamics in the near-field of a broad-area semiconductor laser,” Europhys. Lett. 35, 579–584 (1996).
[CrossRef]

Holm, J.

Hopkinson, M.

P. M. Smowton, E. J. Pearce, H. C. Schneider, W. W. Chow, and M. Hopkinson, “Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers,” Appl. Phys. Lett. 81, 3251–3253 (2002).
[CrossRef]

Ivonin, I.

V. Svetikov, I. Ivonin, A. Koshelev, L. Velikov, Yu. Vorobiev, A. Goltsov, and V. Yankov, “Suppression of lateral modes in wide aperture laser diodes by digital planar holograms,” Proc. SPIE 7918, 79180P (2011).
[CrossRef]

C. Peroz, S. Dhuey, A. Goltsov, M. Volger, B. Harteneck, I. Ivonin, A. Bugrov, S. Cabrini, S. Babin, and V. Yankov, “Digital spectrometer-on-chip fabricated by step and repeat nanoimprint lithography on pre-spin coated films,” Microelectron. Eng. 88, 2092–2095 (2011).
[CrossRef]

S. Babin, C. Peroz, A. Bugrov, A. Goltsov, I. Ivonin, V. Yankov, S. Dhuey, S. Cabrini, E.-B. Kley, and H. Schmidt, “Fabrication of novel digital optical spectrometer on chip,” J. Vac. Sci. Technol. B 27, 3187–3191 (2009).
[CrossRef]

Jechow, A.

A. Jechow, M. Lichtner, R. Menzel, M. Radziunas, D. Skoczowsky, and A. G. Vladimirov, “Stripe-array diode-laser in an off-axis external cavity: theory and experiment,” Opt. Express 17, 19599–19604 (2009).
[CrossRef]

A. Jechow, V. Raab, R. Menzel, M. Cenkier, S. Stry, and J. Sacher, “1 W tunable near diffraction limited light from a broad area laser diode in an external cavity with a line width of 1.7 MHz,” Opt. Commun. 277, 161–165 (2007).
[CrossRef]

Jensen, O. B.

Juodawlkis, P. W.

P. K. L. Chan, K. P. Pipe, J. J. Plant, R. B. Swint, and P. W. Juodawlkis, “Heat transfer and thermal lensing in large-mode high-power laser diodes,” Proc. SPIE 6456, 645603(2007).
[CrossRef]

Kaufel, G.

R. Ostendorf, C. Schilling, G. Kaufel, R. Moritz, J. Wagner, G. Kochem, P. Friedmann, J. Gilly, and M. T. Kelemen, “High-power frequency stabilized tapered diode amplifiers at 1064 nm,” Proc. SPIE 7198, 719811 (2009).
[CrossRef]

Kelemen, M. T.

R. Ostendorf, C. Schilling, G. Kaufel, R. Moritz, J. Wagner, G. Kochem, P. Friedmann, J. Gilly, and M. T. Kelemen, “High-power frequency stabilized tapered diode amplifiers at 1064 nm,” Proc. SPIE 7198, 719811 (2009).
[CrossRef]

M. T. Kelemen, J. Weber, M. Mikulla, and G. Weimann, “High-power high-brightness tapered diode lasers and amplifiers,” Proc. SPIE 5723, 198–208 (2005).
[CrossRef]

Kley, E.-B.

S. Babin, C. Peroz, A. Bugrov, A. Goltsov, I. Ivonin, V. Yankov, S. Dhuey, S. Cabrini, E.-B. Kley, and H. Schmidt, “Fabrication of novel digital optical spectrometer on chip,” J. Vac. Sci. Technol. B 27, 3187–3191 (2009).
[CrossRef]

Kochem, G.

R. Ostendorf, C. Schilling, G. Kaufel, R. Moritz, J. Wagner, G. Kochem, P. Friedmann, J. Gilly, and M. T. Kelemen, “High-power frequency stabilized tapered diode amplifiers at 1064 nm,” Proc. SPIE 7198, 719811 (2009).
[CrossRef]

Koshelev, A.

V. Svetikov, I. Ivonin, A. Koshelev, L. Velikov, Yu. Vorobiev, A. Goltsov, and V. Yankov, “Suppression of lateral modes in wide aperture laser diodes by digital planar holograms,” Proc. SPIE 7918, 79180P (2011).
[CrossRef]

Krakowski, M.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Kwon, T. Y.

S. E. Park, T. Y. Kwon, E. Shin, and H. S. Lee, “A compact extended-cavity diode laser with a Littman configuration,” IEEE Trans. Instrum. Meas. 52, 280–283 (2003).
[CrossRef]

Lang, L.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Lang, R. J.

R. J. Lang, A. G. Larsson, and J. G. Cody, “Lateral modes of broad area semiconductor lasers: theory and experiment,” IEEE J. Quantum Electron. 27, 312–320 (1991).
[CrossRef]

Larkins, E. C.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Larsson, A.

A. Larsson, J. Salzman, M. Mittelstein, and A. Yariv, “Lateral coherence properties of broad-area semiconductor quantum well lasers,” J. Appl. Phys. 60, 66–68 (1986).
[CrossRef]

Larsson, A. G.

R. J. Lang, A. G. Larsson, and J. G. Cody, “Lateral modes of broad area semiconductor lasers: theory and experiment,” IEEE J. Quantum Electron. 27, 312–320 (1991).
[CrossRef]

Lee, H. S.

S. E. Park, T. Y. Kwon, E. Shin, and H. S. Lee, “A compact extended-cavity diode laser with a Littman configuration,” IEEE Trans. Instrum. Meas. 52, 280–283 (2003).
[CrossRef]

Lichtner, M.

Lim, J. J.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Liu, W.

G. J. Steckman, W. Liu, R. Platz, D. Schroeder, C. Moser, and F. Havermeyer, “Volume holographic grating wavelength stabilized laser diodes,” IEEE J. Sel. Top. Quantum Electron. 13, 672–678 (2007).
[CrossRef]

Lou, Q.

Lucas-Leclin, G.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

MacKenzie, R. C. I.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Marciante, J. R.

J. R. Marciante and G. P. Agrawal, “Nonlinear mechanisms of filamentation in broad-area semiconductor lasers,” IEEE J. Quantum Electron. 32, 590–596 (1996).
[CrossRef]

Menzel, R.

A. Jechow, M. Lichtner, R. Menzel, M. Radziunas, D. Skoczowsky, and A. G. Vladimirov, “Stripe-array diode-laser in an off-axis external cavity: theory and experiment,” Opt. Express 17, 19599–19604 (2009).
[CrossRef]

A. Jechow, V. Raab, R. Menzel, M. Cenkier, S. Stry, and J. Sacher, “1 W tunable near diffraction limited light from a broad area laser diode in an external cavity with a line width of 1.7 MHz,” Opt. Commun. 277, 161–165 (2007).
[CrossRef]

Michel, N.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Mikulla, M.

M. T. Kelemen, J. Weber, M. Mikulla, and G. Weimann, “High-power high-brightness tapered diode lasers and amplifiers,” Proc. SPIE 5723, 198–208 (2005).
[CrossRef]

Mittelstein, M.

A. Larsson, J. Salzman, M. Mittelstein, and A. Yariv, “Lateral coherence properties of broad-area semiconductor quantum well lasers,” J. Appl. Phys. 60, 66–68 (1986).
[CrossRef]

Moritz, R.

R. Ostendorf, C. Schilling, G. Kaufel, R. Moritz, J. Wagner, G. Kochem, P. Friedmann, J. Gilly, and M. T. Kelemen, “High-power frequency stabilized tapered diode amplifiers at 1064 nm,” Proc. SPIE 7198, 719811 (2009).
[CrossRef]

Moser, C.

G. J. Steckman, W. Liu, R. Platz, D. Schroeder, C. Moser, and F. Havermeyer, “Volume holographic grating wavelength stabilized laser diodes,” IEEE J. Sel. Top. Quantum Electron. 13, 672–678 (2007).
[CrossRef]

Ostendorf, R.

R. Ostendorf, C. Schilling, G. Kaufel, R. Moritz, J. Wagner, G. Kochem, P. Friedmann, J. Gilly, and M. T. Kelemen, “High-power frequency stabilized tapered diode amplifiers at 1064 nm,” Proc. SPIE 7198, 719811 (2009).
[CrossRef]

Paboeuf, D.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Park, S. E.

S. E. Park, T. Y. Kwon, E. Shin, and H. S. Lee, “A compact extended-cavity diode laser with a Littman configuration,” IEEE Trans. Instrum. Meas. 52, 280–283 (2003).
[CrossRef]

Pauliat, G.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Pearce, E. J.

P. M. Smowton, E. J. Pearce, H. C. Schneider, W. W. Chow, and M. Hopkinson, “Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers,” Appl. Phys. Lett. 81, 3251–3253 (2002).
[CrossRef]

Pedersen, C.

Peroz, C.

C. Peroz, S. Dhuey, A. Goltsov, M. Volger, B. Harteneck, I. Ivonin, A. Bugrov, S. Cabrini, S. Babin, and V. Yankov, “Digital spectrometer-on-chip fabricated by step and repeat nanoimprint lithography on pre-spin coated films,” Microelectron. Eng. 88, 2092–2095 (2011).
[CrossRef]

S. Babin, C. Peroz, A. Bugrov, A. Goltsov, I. Ivonin, V. Yankov, S. Dhuey, S. Cabrini, E.-B. Kley, and H. Schmidt, “Fabrication of novel digital optical spectrometer on chip,” J. Vac. Sci. Technol. B 27, 3187–3191 (2009).
[CrossRef]

Petersen, P. M.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

S. Blaaberg, P. M. Petersen, and B. Tromborg, “Structure, stability, and spectra of lateral modes of a broad-area semiconductor laser,” IEEE J. Quantum Electron. 43, 959–973 (2007).
[CrossRef]

M. Chi, O. B. Jensen, J. Holm, C. Pedersen, P. E. Andersen, G. Erbert, B. Sumpf, and P. M. Petersen, “Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier,” Opt. Express 13, 10589–10596(2005).
[CrossRef]

Pipe, K. P.

P. K. L. Chan, K. P. Pipe, J. J. Plant, R. B. Swint, and P. W. Juodawlkis, “Heat transfer and thermal lensing in large-mode high-power laser diodes,” Proc. SPIE 6456, 645603(2007).
[CrossRef]

Plant, J. J.

P. K. L. Chan, K. P. Pipe, J. J. Plant, R. B. Swint, and P. W. Juodawlkis, “Heat transfer and thermal lensing in large-mode high-power laser diodes,” Proc. SPIE 6456, 645603(2007).
[CrossRef]

Platz, R.

G. J. Steckman, W. Liu, R. Platz, D. Schroeder, C. Moser, and F. Havermeyer, “Volume holographic grating wavelength stabilized laser diodes,” IEEE J. Sel. Top. Quantum Electron. 13, 672–678 (2007).
[CrossRef]

Raab, V.

A. Jechow, V. Raab, R. Menzel, M. Cenkier, S. Stry, and J. Sacher, “1 W tunable near diffraction limited light from a broad area laser diode in an external cavity with a line width of 1.7 MHz,” Opt. Commun. 277, 161–165 (2007).
[CrossRef]

Radziunas, M.

Sacher, J.

A. Jechow, V. Raab, R. Menzel, M. Cenkier, S. Stry, and J. Sacher, “1 W tunable near diffraction limited light from a broad area laser diode in an external cavity with a line width of 1.7 MHz,” Opt. Commun. 277, 161–165 (2007).
[CrossRef]

Salzman, J.

A. Larsson, J. Salzman, M. Mittelstein, and A. Yariv, “Lateral coherence properties of broad-area semiconductor quantum well lasers,” J. Appl. Phys. 60, 66–68 (1986).
[CrossRef]

Schilling, C.

R. Ostendorf, C. Schilling, G. Kaufel, R. Moritz, J. Wagner, G. Kochem, P. Friedmann, J. Gilly, and M. T. Kelemen, “High-power frequency stabilized tapered diode amplifiers at 1064 nm,” Proc. SPIE 7198, 719811 (2009).
[CrossRef]

Schmidt, H.

S. Babin, C. Peroz, A. Bugrov, A. Goltsov, I. Ivonin, V. Yankov, S. Dhuey, S. Cabrini, E.-B. Kley, and H. Schmidt, “Fabrication of novel digital optical spectrometer on chip,” J. Vac. Sci. Technol. B 27, 3187–3191 (2009).
[CrossRef]

Schneider, H. C.

P. M. Smowton, E. J. Pearce, H. C. Schneider, W. W. Chow, and M. Hopkinson, “Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers,” Appl. Phys. Lett. 81, 3251–3253 (2002).
[CrossRef]

Schroeder, D.

G. J. Steckman, W. Liu, R. Platz, D. Schroeder, C. Moser, and F. Havermeyer, “Volume holographic grating wavelength stabilized laser diodes,” IEEE J. Sel. Top. Quantum Electron. 13, 672–678 (2007).
[CrossRef]

Shin, E.

S. E. Park, T. Y. Kwon, E. Shin, and H. S. Lee, “A compact extended-cavity diode laser with a Littman configuration,” IEEE Trans. Instrum. Meas. 52, 280–283 (2003).
[CrossRef]

Skoczowsky, D.

Smowton, P. M.

P. M. Smowton, E. J. Pearce, H. C. Schneider, W. W. Chow, and M. Hopkinson, “Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers,” Appl. Phys. Lett. 81, 3251–3253 (2002).
[CrossRef]

Steckman, G. J.

G. J. Steckman, W. Liu, R. Platz, D. Schroeder, C. Moser, and F. Havermeyer, “Volume holographic grating wavelength stabilized laser diodes,” IEEE J. Sel. Top. Quantum Electron. 13, 672–678 (2007).
[CrossRef]

Stry, S.

A. Jechow, V. Raab, R. Menzel, M. Cenkier, S. Stry, and J. Sacher, “1 W tunable near diffraction limited light from a broad area laser diode in an external cavity with a line width of 1.7 MHz,” Opt. Commun. 277, 161–165 (2007).
[CrossRef]

Su, Z.

Sujecki, S.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Sumpf, B.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

M. Chi, O. B. Jensen, J. Holm, C. Pedersen, P. E. Andersen, G. Erbert, B. Sumpf, and P. M. Petersen, “Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier,” Opt. Express 13, 10589–10596(2005).
[CrossRef]

Svetikov, V.

V. Svetikov, I. Ivonin, A. Koshelev, L. Velikov, Yu. Vorobiev, A. Goltsov, and V. Yankov, “Suppression of lateral modes in wide aperture laser diodes by digital planar holograms,” Proc. SPIE 7918, 79180P (2011).
[CrossRef]

Swint, R. B.

P. K. L. Chan, K. P. Pipe, J. J. Plant, R. B. Swint, and P. W. Juodawlkis, “Heat transfer and thermal lensing in large-mode high-power laser diodes,” Proc. SPIE 6456, 645603(2007).
[CrossRef]

Thestrup, B.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Tromborg, B.

S. Blaaberg, P. M. Petersen, and B. Tromborg, “Structure, stability, and spectra of lateral modes of a broad-area semiconductor laser,” IEEE J. Quantum Electron. 43, 959–973 (2007).
[CrossRef]

Velikov, L.

V. Svetikov, I. Ivonin, A. Koshelev, L. Velikov, Yu. Vorobiev, A. Goltsov, and V. Yankov, “Suppression of lateral modes in wide aperture laser diodes by digital planar holograms,” Proc. SPIE 7918, 79180P (2011).
[CrossRef]

Vladimirov, A. G.

Volger, M.

C. Peroz, S. Dhuey, A. Goltsov, M. Volger, B. Harteneck, I. Ivonin, A. Bugrov, S. Cabrini, S. Babin, and V. Yankov, “Digital spectrometer-on-chip fabricated by step and repeat nanoimprint lithography on pre-spin coated films,” Microelectron. Eng. 88, 2092–2095 (2011).
[CrossRef]

Vorobiev, Yu.

V. Svetikov, I. Ivonin, A. Koshelev, L. Velikov, Yu. Vorobiev, A. Goltsov, and V. Yankov, “Suppression of lateral modes in wide aperture laser diodes by digital planar holograms,” Proc. SPIE 7918, 79180P (2011).
[CrossRef]

Wagner, J.

R. Ostendorf, C. Schilling, G. Kaufel, R. Moritz, J. Wagner, G. Kochem, P. Friedmann, J. Gilly, and M. T. Kelemen, “High-power frequency stabilized tapered diode amplifiers at 1064 nm,” Proc. SPIE 7198, 719811 (2009).
[CrossRef]

Weber, J.

M. T. Kelemen, J. Weber, M. Mikulla, and G. Weimann, “High-power high-brightness tapered diode lasers and amplifiers,” Proc. SPIE 5723, 198–208 (2005).
[CrossRef]

Wei, R.

Weimann, G.

M. T. Kelemen, J. Weber, M. Mikulla, and G. Weimann, “High-power high-brightness tapered diode lasers and amplifiers,” Proc. SPIE 5723, 198–208 (2005).
[CrossRef]

Wenzel, H.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Wu, X.

J. Chen, X. Wu, J. Ge, A. Hermerschmidt, and H. J. Eichler, “Broad-area laser diode with 0.02 nm bandwidth and diffraction limited output due to double external cavity feedback,” Appl. Phys. Lett. 85, 524–525 (2004).
[CrossRef]

Yankov, V.

V. Svetikov, I. Ivonin, A. Koshelev, L. Velikov, Yu. Vorobiev, A. Goltsov, and V. Yankov, “Suppression of lateral modes in wide aperture laser diodes by digital planar holograms,” Proc. SPIE 7918, 79180P (2011).
[CrossRef]

C. Peroz, S. Dhuey, A. Goltsov, M. Volger, B. Harteneck, I. Ivonin, A. Bugrov, S. Cabrini, S. Babin, and V. Yankov, “Digital spectrometer-on-chip fabricated by step and repeat nanoimprint lithography on pre-spin coated films,” Microelectron. Eng. 88, 2092–2095 (2011).
[CrossRef]

S. Babin, C. Peroz, A. Bugrov, A. Goltsov, I. Ivonin, V. Yankov, S. Dhuey, S. Cabrini, E.-B. Kley, and H. Schmidt, “Fabrication of novel digital optical spectrometer on chip,” J. Vac. Sci. Technol. B 27, 3187–3191 (2009).
[CrossRef]

Yariv, A.

A. Larsson, J. Salzman, M. Mittelstein, and A. Yariv, “Lateral coherence properties of broad-area semiconductor quantum well lasers,” J. Appl. Phys. 60, 66–68 (1986).
[CrossRef]

Zhang, Z.

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Zhou, J.

Appl. Phys. Lett. (2)

J. Chen, X. Wu, J. Ge, A. Hermerschmidt, and H. J. Eichler, “Broad-area laser diode with 0.02 nm bandwidth and diffraction limited output due to double external cavity feedback,” Appl. Phys. Lett. 85, 524–525 (2004).
[CrossRef]

P. M. Smowton, E. J. Pearce, H. C. Schneider, W. W. Chow, and M. Hopkinson, “Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers,” Appl. Phys. Lett. 81, 3251–3253 (2002).
[CrossRef]

Europhys. Lett. (1)

I. Fischer, O. Hess, W. Elsäßer, and E. Göbel, “Complex spatio-temporal dynamics in the near-field of a broad-area semiconductor laser,” Europhys. Lett. 35, 579–584 (1996).
[CrossRef]

IEEE J. Quantum Electron. (3)

R. J. Lang, A. G. Larsson, and J. G. Cody, “Lateral modes of broad area semiconductor lasers: theory and experiment,” IEEE J. Quantum Electron. 27, 312–320 (1991).
[CrossRef]

S. Blaaberg, P. M. Petersen, and B. Tromborg, “Structure, stability, and spectra of lateral modes of a broad-area semiconductor laser,” IEEE J. Quantum Electron. 43, 959–973 (2007).
[CrossRef]

J. R. Marciante and G. P. Agrawal, “Nonlinear mechanisms of filamentation in broad-area semiconductor lasers,” IEEE J. Quantum Electron. 32, 590–596 (1996).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (2)

J. J. Lim, S. Sujecki, L. Lang, Z. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K.-H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

G. J. Steckman, W. Liu, R. Platz, D. Schroeder, C. Moser, and F. Havermeyer, “Volume holographic grating wavelength stabilized laser diodes,” IEEE J. Sel. Top. Quantum Electron. 13, 672–678 (2007).
[CrossRef]

IEEE Trans. Instrum. Meas. (1)

S. E. Park, T. Y. Kwon, E. Shin, and H. S. Lee, “A compact extended-cavity diode laser with a Littman configuration,” IEEE Trans. Instrum. Meas. 52, 280–283 (2003).
[CrossRef]

J. Appl. Phys. (1)

A. Larsson, J. Salzman, M. Mittelstein, and A. Yariv, “Lateral coherence properties of broad-area semiconductor quantum well lasers,” J. Appl. Phys. 60, 66–68 (1986).
[CrossRef]

J. Vac. Sci. Technol. B (1)

S. Babin, C. Peroz, A. Bugrov, A. Goltsov, I. Ivonin, V. Yankov, S. Dhuey, S. Cabrini, E.-B. Kley, and H. Schmidt, “Fabrication of novel digital optical spectrometer on chip,” J. Vac. Sci. Technol. B 27, 3187–3191 (2009).
[CrossRef]

Microelectron. Eng. (1)

C. Peroz, S. Dhuey, A. Goltsov, M. Volger, B. Harteneck, I. Ivonin, A. Bugrov, S. Cabrini, S. Babin, and V. Yankov, “Digital spectrometer-on-chip fabricated by step and repeat nanoimprint lithography on pre-spin coated films,” Microelectron. Eng. 88, 2092–2095 (2011).
[CrossRef]

Opt. Commun. (1)

A. Jechow, V. Raab, R. Menzel, M. Cenkier, S. Stry, and J. Sacher, “1 W tunable near diffraction limited light from a broad area laser diode in an external cavity with a line width of 1.7 MHz,” Opt. Commun. 277, 161–165 (2007).
[CrossRef]

Opt. Express (3)

Proc. SPIE (4)

M. T. Kelemen, J. Weber, M. Mikulla, and G. Weimann, “High-power high-brightness tapered diode lasers and amplifiers,” Proc. SPIE 5723, 198–208 (2005).
[CrossRef]

V. Svetikov, I. Ivonin, A. Koshelev, L. Velikov, Yu. Vorobiev, A. Goltsov, and V. Yankov, “Suppression of lateral modes in wide aperture laser diodes by digital planar holograms,” Proc. SPIE 7918, 79180P (2011).
[CrossRef]

R. Ostendorf, C. Schilling, G. Kaufel, R. Moritz, J. Wagner, G. Kochem, P. Friedmann, J. Gilly, and M. T. Kelemen, “High-power frequency stabilized tapered diode amplifiers at 1064 nm,” Proc. SPIE 7198, 719811 (2009).
[CrossRef]

P. K. L. Chan, K. P. Pipe, J. J. Plant, R. B. Swint, and P. W. Juodawlkis, “Heat transfer and thermal lensing in large-mode high-power laser diodes,” Proc. SPIE 6456, 645603(2007).
[CrossRef]

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Figures (10)

Fig. 1.
Fig. 1.

Spectrum of a broad aperture laser diode standing alone for different driving currents.

Fig. 2.
Fig. 2.

Intensity distribution in the far field of a broad aperture laser diode standing alone. Driving currents I=1A(2.5Ith) and I=2A(5Ith).

Fig. 3.
Fig. 3.

Intensity distribution measured at the output edge of broad aperture laser diode at I=1A (thick curve) and the Gaussian functions, either of which represents the distribution within the particular filament (thin curves).

Fig. 4.
Fig. 4.

Intensity distribution measured at the output edge of broad aperture laser diode at I=2A(I=5Ith) (thick curve) and the Gaussian functions, either of which represents the distribution within the particular filament (thin curves).

Fig. 5.
Fig. 5.

Simulated distributions of (a) the reflection amplitude and (b) phase (Green functions) in dependence on the laser wavelength and position along the laser output facet. Central spectral channel no. 71 along the ordinate axis corresponds to the wavelength of 1064 nm. The bandwidth of the channel equals 1 nm. Due to symmetry considerations, only one half of the output aperture is shown (50 nm wide). The desired spatial periodicity of 11 μm is clearly observed in the figures.

Fig. 6.
Fig. 6.

Scanning electron microscopy top-view picture of a DPH. The linewidth is around 187 nm.

Fig. 7.
Fig. 7.

Spectrum of BALD equipped with DPH output coupler for different currents: I=1A(2.5Ith) and I=2A(5Ith).

Fig. 8.
Fig. 8.

Intensity distribution in the far field of a laser for below- and above-threshold operation (I=1.7Ith).

Fig. 9.
Fig. 9.

Schematics of experiment with BALD with DPH output coupler.

Fig. 10.
Fig. 10.

Image of BALD–DPH assembly taken in near IR wavelength region.

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