Optical self-switching based on a
					semiconductor-optical-amplifier-assisted Sagnac interferometer

Morteza Jamali; Vahid Ahmadi; Mohammad Razaghi

doi:10.1364/JOSAB.30.002576

Optical self-switching based on a semiconductor-optical-amplifier-assisted Sagnac interferometer

Morteza Jamali, Vahid Ahmadi, and Mohammad Razaghi

Journal of the Optical Society of America B
Vol. 30,
Issue 10,
pp. 2576-2583
(2013)
•https://doi.org/10.1364/JOSAB.30.002576

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Morteza Jamali, Vahid Ahmadi, and Mohammad Razaghi, "Optical self-switching based on a semiconductor-optical-amplifier-assisted Sagnac interferometer," J. Opt. Soc. Am. B 30, 2576-2583 (2013)

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Related Topics
Table of Contents Category
- Optical Devices
Optics & Photonics Topics
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The topics in this list come from the OSA Optics and Photonics Topics applied to this article.
Previously assigned OCIS codes
- Sagnac effect (120.5790)
- Optical switching devices (130.4815)
- Semiconductor optical amplifiers (250.5980)

About this Article
History
- Original Manuscript: March 12, 2013
- Revised Manuscript: July 24, 2013
- Manuscript Accepted: August 7, 2013
- Published: September 3, 2013

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Abstract

The self-switching mechanism in a Sagnac interferometer is studied numerically. A new structure of a semiconductor-optical-amplifier (SOA)-based Sagnac interferometer self-switch (SISS) is presented. For analyzing the switching characteristics of the structure, an improved finite-difference beam propagation method is utilized to study counterpropagation pulses in the SOA. All intraband nonlinear gain compression effects in the SOA that have not been considered simultaneously in previous Sagnac switches are considered. The effects of structural and input pulse parameters on the SISS operation are analyzed. Simulation results determine the optimum condition for the maximum switching output power.

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Symbol	Quantity	Value
$L$	SOA length	500 μm
$A$	Effective area	$5 {μm}^{2}$
$X (Y = X)$	Input (output) coupler splitting ratio	0.3
$E_{in}$	Input pulse energy	1 pJ
$τ_{in}$	Input pulse width	200 fs
$f_{0}$	Center frequency of the pulse	193.5 THz
$g_{0}$	Linear gain	$85 {cm}^{- 1}$
$β_{2}$	Group velocity dispersion	$0.045 {ps}^{2} {cm}^{- 1}$
$W_{s}$	Saturation energy	10 pJ
$α_{N}$	Linewidth enhancement factor due to the carrier depletion	7
$α_{T}$	Linewidth enhancement factor due to the CH	1
$h_{1}$	The contribution of stimulated emission and free carrier absorption to CH gain reduction	$0.3 {cm}^{- 1} {pJ}^{- 1}$
$h_{2}$	The contribution of two photon absorption	$300 fs {cm}^{- 1} {pJ}^{- 2}$
$τ_{s}$	Carrier lifetime	500 ps
$τ_{CH}$	CH relaxation time	800 fs
$τ_{SHB}$	SHB relaxation time	150 fs
$P_{SHB}$	SHB saturation power	11.32 W
$Γ$	Linear loss	$15 {cm}^{- 1}$
$n_{2}$	Instantaneous nonlinear Kerr effect coefficient	$- 0.6 {cm}^{2} {TW}^{- 1}$
$γ_{2 p}$	Two photon absorption coefficient	$1.6 {cm}^{- 1} {TW}^{- 1}$
$A_{1}$		$0.8 fs {μm}^{- 1}$
$B_{1}$	Parameters describing second-order Taylor expansion of dynamically gain spectrum	$- 150 fs$
$A_{2}$		$- 150 {fs}^{2} {μm}^{- 1}$
$B_{2}$		$0 {fs}^{2}$

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