Theoretical investigation on gain recovery dynamics in step quantum well semiconductor optical amplifiers

Cui Qin; Xi Huang; Xinliang Zhang

doi:10.1364/JOSAB.29.000607

Journal of the Optical Society of America B
Vol. 29,
Issue 4,
pp. 607-613
(2012)
•https://doi.org/10.1364/JOSAB.29.000607

Theoretical investigation on gain recovery dynamics in step quantum well semiconductor optical amplifiers

Cui Qin, Xi Huang, and Xinliang Zhang

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Cui Qin, Xi Huang, and Xinliang Zhang, "Theoretical investigation on gain recovery dynamics in step quantum well semiconductor optical amplifiers," J. Opt. Soc. Am. B 29, 607-613 (2012)

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Abstract

In this paper, gain recovery dynamic characteristics in the step quantum well (QW) semiconductor optical amplifier (SOA) are theoretically investigated via a detailed model. We numerically solve the coupled rate equations including microscopically calculated carrier-phonon scattering rates between the carrier reservoir and the ground state on the basis of Fermi’s golden rule. The carrier-phonon scattering rates are given as functions of the width and height of the step in the QW of the SOA. It is demonstrated that the electron scattering rate in the step QW SOA depends on the potential parameters of the carrier reservoir region. Finally, it is shown that the SOA with a larger transition rate has a shorter carrier recovery time than the other SOAs via analyzing and comparing the gain and phase recovery dynamics in different types of SOA samples.

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Description	Symbol	Value/Unit
SOA width	$W$	2 μm
SOA thickness	$D$	0.1 μm
SOA length	$L$	1 mm
Ground refractive index	$n$	3.6
Confinement factor	$Γ$	0.5
Waveguide loss	$α_{0}$	$2.0 \times 10^{- 3} {μm}^{- 1}$
Linear recombination	$A$	$2 \times 10^{8} s^{- 1}$
Bimolecular recombination	$B$	$6 \times 10^{- 16} m^{3} s^{- 1}$
Auger recombination	$C$	$8 \times 10^{- 41} m^{6} s^{- 1}$
Effective capture time	$τ_{c b}$	6 ps [9]
Effective escape time	$τ_{e b}$	60 ps [9]
Static dielectric constant	$ε_{s}$	$1.167 \times 10^{- 10} F / m$
High-frequency dielectric constant	$ε_{\infty}$	$9.642 \times 10^{- 9} F / m$
LO phonon energy	$E_{LO}$	36 meV [11]

Item	Step-Layer Material	Step-Layer Width	Bias Current	Item	Step-Layer Material	Step-Layer Width	Bias Current
A	${In}_{0.48} {Ga}_{0.52} As$	5 nm	100 mA	D	${In}_{0.50} {Ga}_{0.50} As$	10 nm	138 mA
B	${In}_{0.48} {Ga}_{0.52} As$	10 nm	115 mA	E	${In}_{0.47} {Ga}_{0.53} As$	10 nm	118 mA
C	${In}_{0.48} {Ga}_{0.52} As$	16 nm	122 mA	F	${In}_{0.44} {Ga}_{0.56} As$	10 nm	88 mA

Description	Symbol	Value/Unit
SOA width	$W$	2 μm
SOA thickness	$D$	0.1 μm
SOA length	$L$	1 mm
Ground refractive index	$n$	3.6
Confinement factor	$Γ$	0.5
Waveguide loss	$α_{0}$	$2.0 \times 10^{- 3} {μm}^{- 1}$
Linear recombination	$A$	$2 \times 10^{8} s^{- 1}$
Bimolecular recombination	$B$	$6 \times 10^{- 16} m^{3} s^{- 1}$
Auger recombination	$C$	$8 \times 10^{- 41} m^{6} s^{- 1}$
Effective capture time	$τ_{c b}$	6 ps [9]
Effective escape time	$τ_{e b}$	60 ps [9]
Static dielectric constant	$ε_{s}$	$1.167 \times 10^{- 10} F / m$
High-frequency dielectric constant	$ε_{\infty}$	$9.642 \times 10^{- 9} F / m$
LO phonon energy	$E_{LO}$	36 meV [11]

Item	Step-Layer Material	Step-Layer Width	Bias Current	Item	Step-Layer Material	Step-Layer Width	Bias Current
A	${In}_{0.48} {Ga}_{0.52} As$	5 nm	100 mA	D	${In}_{0.50} {Ga}_{0.50} As$	10 nm	138 mA
B	${In}_{0.48} {Ga}_{0.52} As$	10 nm	115 mA	E	${In}_{0.47} {Ga}_{0.53} As$	10 nm	118 mA
C	${In}_{0.48} {Ga}_{0.52} As$	16 nm	122 mA	F	${In}_{0.44} {Ga}_{0.56} As$	10 nm	88 mA

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Journal of the Optical Society of America B