Optical studies of ballistic currents in semiconductors [Invited]

Abstract

We present a summary of recent studies of ballistic currents using nonlinear optical techniques. Quantum interference between one- and two-photon absorption pathways is used to inject and control ballistic currents in GaAs samples. With this, a pure charge current, pure spin current, or spin-polarized charge current can be injected by changing the polarization configuration of the two pump pulses. Such currents are temporally and spatially resolved using high-resolution pump–probe techniques, including a derivative-detection scheme, which allows detection of the motion of carriers as small as 0.1 nm. Observation of the intrinsic inverse spin Hall effect in the ballistic regime, a study of time-resolved ballistic spin-polarized charge currents, and a study of the efficiency of spin current injection by quantum interference were all achieved using these techniques. Additionally, we discuss demonstrations of second-order nonlinear optical effects induced by charge and spin currents, which allow for the nondestructive, noninvasive, and real-time imaging of currents.

©2012 Optical Society of America

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