Abstract

We study the intensity dependence of single-photon emission from a single semiconductor quantum dot after pulsed excitation. A semiconductor model is introduced that accounts for various configurations resulting from the occupation of the localized single-particle states with carriers. A detailed account is given on how the photon correlation dynamics and the antibunching can be calculated. We predict a novel effect, where, for strong excitation, the formation of multiexciton configurations during the excitation pulse leads to an improved antibunching signature in g(2).

© 2012 Optical Society of America

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