Abstract

Polarization-resolved reflections from ordered and bunched silicon nanowire arrays are measured and compared. It is shown that the reflections reduce considerably in bunched nanowires for the p-polarized input while not changing considerably for the s-polarized input between the ordered and bunched nanowires. The reflection is less than 9% for the whole 230–1000 nm wavelength excitation range for the bunched nanowires in the p-polarized input. Frequency-selective reflection features are observed in the ordered nanowires. Results are explained using effective index approximation and finite difference time domain simulations.

© 2012 Optical Society of America

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